Growth and band gap of strained 〈110〉 Si1-xGe x layers on silicon substrates by chemical vapor deposition

C. W. Liu, J. C. Sturm, Y. R.J. Lacroix, M. L.W. Thewalt, D. D. Perovic

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Abstract

We report chemical vapor deposition growth of strained Si 1-xGex alloy layers on 〈110〉 Si substrates. Compared to the same growth conditions on 〈100〉 substrates, a slightly lower Ge composition and a much lower growth rate was observed. From photoluminescence measurements, the band gap of these films for 0.16≤x≤0.43 is evaluated and compared to theory. Finally, a surprisingly large]] no-phonon" replica line strength ratio was observed as compared with that observed in 〈100〉 layers.

Original languageEnglish (US)
Pages (from-to)76-78
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number1
DOIs
StatePublished - Dec 1 1994

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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