We report chemical vapor deposition growth of strained Si 1-xGex alloy layers on 〈110〉 Si substrates. Compared to the same growth conditions on 〈100〉 substrates, a slightly lower Ge composition and a much lower growth rate was observed. From photoluminescence measurements, the band gap of these films for 0.16≤x≤0.43 is evaluated and compared to theory. Finally, a surprisingly large]] no-phonon" replica line strength ratio was observed as compared with that observed in 〈100〉 layers.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1994|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)