Growth and band gap of strained 〈110〉 Si1-xGe x layers on silicon substrates by chemical vapor deposition

C. W. Liu; J. C. Sturm; Y. R.J. Lacroix; M. L.W. Thewalt; D. D. Perovic

doi:10.1063/1.113079

Growth and band gap of strained 〈110〉 Si_1-xGe _x layers on silicon substrates by chemical vapor deposition

C. W. Liu, J. C. Sturm, Y. R.J. Lacroix, M. L.W. Thewalt, D. D. Perovic

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27 Scopus citations

Abstract

We report chemical vapor deposition growth of strained Si _1-xGe_x alloy layers on 〈110〉 Si substrates. Compared to the same growth conditions on 〈100〉 substrates, a slightly lower Ge composition and a much lower growth rate was observed. From photoluminescence measurements, the band gap of these films for 0.16≤x≤0.43 is evaluated and compared to theory. Finally, a surprisingly large]] no-phonon" replica line strength ratio was observed as compared with that observed in 〈100〉 layers.

Original language	English (US)
Pages (from-to)	76-78
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	1
DOIs	https://doi.org/10.1063/1.113079
State	Published - 1994

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.113079

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abstract = "We report chemical vapor deposition growth of strained Si 1-xGex alloy layers on 〈110〉 Si substrates. Compared to the same growth conditions on 〈100〉 substrates, a slightly lower Ge composition and a much lower growth rate was observed. From photoluminescence measurements, the band gap of these films for 0.16≤x≤0.43 is evaluated and compared to theory. Finally, a surprisingly large]] no-phonon{"} replica line strength ratio was observed as compared with that observed in 〈100〉 layers.",

author = "Liu, {C. W.} and Sturm, {J. C.} and Lacroix, {Y. R.J.} and Thewalt, {M. L.W.} and Perovic, {D. D.}",

year = "1994",

doi = "10.1063/1.113079",

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T1 - Growth and band gap of strained 〈110〉 Si1-xGe x layers on silicon substrates by chemical vapor deposition

AU - Liu, C. W.

AU - Sturm, J. C.

AU - Lacroix, Y. R.J.

AU - Thewalt, M. L.W.

AU - Perovic, D. D.

PY - 1994

Y1 - 1994

N2 - We report chemical vapor deposition growth of strained Si 1-xGex alloy layers on 〈110〉 Si substrates. Compared to the same growth conditions on 〈100〉 substrates, a slightly lower Ge composition and a much lower growth rate was observed. From photoluminescence measurements, the band gap of these films for 0.16≤x≤0.43 is evaluated and compared to theory. Finally, a surprisingly large]] no-phonon" replica line strength ratio was observed as compared with that observed in 〈100〉 layers.

AB - We report chemical vapor deposition growth of strained Si 1-xGex alloy layers on 〈110〉 Si substrates. Compared to the same growth conditions on 〈100〉 substrates, a slightly lower Ge composition and a much lower growth rate was observed. From photoluminescence measurements, the band gap of these films for 0.16≤x≤0.43 is evaluated and compared to theory. Finally, a surprisingly large]] no-phonon" replica line strength ratio was observed as compared with that observed in 〈100〉 layers.

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JF - Applied Physics Letters

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ER -

Growth and band gap of strained 〈110〉 Si_1-xGe _x layers on silicon substrates by chemical vapor deposition

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