Graphene transistors fabricated via transfer-printing in device active-areas on large wafer

Xiaogan Liang; Zengli Fu; Stephen Y. Chou

doi:10.1021/nl072566s

Graphene transistors fabricated via transfer-printing in device active-areas on large wafer

Xiaogan Liang, Zengli Fu, Stephen Y. Chou

Research output: Contribution to journal › Article › peer-review

354 Scopus citations

Abstract

We demonstrate a method that uses the pillars on a stamp to cut and exfoliate graphene islands from a graphite and then uses transfer printing to place the islands from the stamp into the device active-areas on a substrate with a placement accuracy potentially in nanometers. The process can be repeated to cover all device active-areas over an entire wafer. We also report the transistors fabricated from the printed graphene. The transistors show a hole and electron mobility of 3735 and 795 cm²/V-s, respectively, and a maximum drive-current of 1.7 mA/μm (at V_DS = 1 V), which are among the highest reported for room temperature. The effects of various transferring and fixing layers on sticking graphenes to a stamp and to a substrate, respectively, were also investigated.

Original language	English (US)
Pages (from-to)	3840-3844
Number of pages	5
Journal	Nano Letters
Volume	7
Issue number	12
DOIs	https://doi.org/10.1021/nl072566s
State	Published - Dec 2007

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl072566s

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abstract = "We demonstrate a method that uses the pillars on a stamp to cut and exfoliate graphene islands from a graphite and then uses transfer printing to place the islands from the stamp into the device active-areas on a substrate with a placement accuracy potentially in nanometers. The process can be repeated to cover all device active-areas over an entire wafer. We also report the transistors fabricated from the printed graphene. The transistors show a hole and electron mobility of 3735 and 795 cm2/V-s, respectively, and a maximum drive-current of 1.7 mA/μm (at VDS = 1 V), which are among the highest reported for room temperature. The effects of various transferring and fixing layers on sticking graphenes to a stamp and to a substrate, respectively, were also investigated.",

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N2 - We demonstrate a method that uses the pillars on a stamp to cut and exfoliate graphene islands from a graphite and then uses transfer printing to place the islands from the stamp into the device active-areas on a substrate with a placement accuracy potentially in nanometers. The process can be repeated to cover all device active-areas over an entire wafer. We also report the transistors fabricated from the printed graphene. The transistors show a hole and electron mobility of 3735 and 795 cm2/V-s, respectively, and a maximum drive-current of 1.7 mA/μm (at VDS = 1 V), which are among the highest reported for room temperature. The effects of various transferring and fixing layers on sticking graphenes to a stamp and to a substrate, respectively, were also investigated.

AB - We demonstrate a method that uses the pillars on a stamp to cut and exfoliate graphene islands from a graphite and then uses transfer printing to place the islands from the stamp into the device active-areas on a substrate with a placement accuracy potentially in nanometers. The process can be repeated to cover all device active-areas over an entire wafer. We also report the transistors fabricated from the printed graphene. The transistors show a hole and electron mobility of 3735 and 795 cm2/V-s, respectively, and a maximum drive-current of 1.7 mA/μm (at VDS = 1 V), which are among the highest reported for room temperature. The effects of various transferring and fixing layers on sticking graphenes to a stamp and to a substrate, respectively, were also investigated.

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Graphene transistors fabricated via transfer-printing in device active-areas on large wafer

Abstract

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