Graded-Base Si/Si 1-xGex/Si Heterojunction Bipolar Transistors Grown by Rapid Thermal Chemical Vapor Deposition with Near-Ideal Electrical Characteristics

J. C. Sturm, E. J. Prinz

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Abstract

Graded-base and uniform base Si/Si1-xGex/Si heterojunction bipolar transistors with near-ideal base and collector currents have been fabricated by rapid thermal chemical vapor deposition (RTCVD). The temperature dependences of the collector currents are shown to obey a simple analytical model that can be applied to devices which have arbitrary base profiles. The base currents are independent of base composition, and current gains in excess of 11 000 have been observed at 133 K.

Original languageEnglish (US)
Pages (from-to)303-305
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number6
DOIs
StatePublished - Jun 1991

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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