Graded-base and uniform base Si/Si1-xGex/Si heterojunction bipolar transistors with near-ideal base and collector currents have been fabricated by rapid thermal chemical vapor deposition (RTCVD). The temperature dependences of the collector currents are shown to obey a simple analytical model that can be applied to devices which have arbitrary base profiles. The base currents are independent of base composition, and current gains in excess of 11 000 have been observed at 133 K.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - Jun 1991|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering