Graded-Base Si/Si 1-xGex/Si Heterojunction Bipolar Transistors Grown by Rapid Thermal Chemical Vapor Deposition with Near-Ideal Electrical Characteristics

J. C. Sturm; E. J. Prinz

doi:10.1109/55.82068

Graded-Base Si/Si _1-xGe_x/Si Heterojunction Bipolar Transistors Grown by Rapid Thermal Chemical Vapor Deposition with Near-Ideal Electrical Characteristics

J. C. Sturm, E. J. Prinz

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41 Scopus citations

Abstract

Graded-base and uniform base Si/Si_1-xGe_x/Si heterojunction bipolar transistors with near-ideal base and collector currents have been fabricated by rapid thermal chemical vapor deposition (RTCVD). The temperature dependences of the collector currents are shown to obey a simple analytical model that can be applied to devices which have arbitrary base profiles. The base currents are independent of base composition, and current gains in excess of 11 000 have been observed at 133 K.

Original language	English (US)
Pages (from-to)	303-305
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	12
Issue number	6
DOIs	https://doi.org/10.1109/55.82068
State	Published - Jun 1991

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.82068

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title = "Graded-Base Si/Si 1-xGex/Si Heterojunction Bipolar Transistors Grown by Rapid Thermal Chemical Vapor Deposition with Near-Ideal Electrical Characteristics",

abstract = "Graded-base and uniform base Si/Si1-xGex/Si heterojunction bipolar transistors with near-ideal base and collector currents have been fabricated by rapid thermal chemical vapor deposition (RTCVD). The temperature dependences of the collector currents are shown to obey a simple analytical model that can be applied to devices which have arbitrary base profiles. The base currents are independent of base composition, and current gains in excess of 11 000 have been observed at 133 K.",

author = "Sturm, {J. C.} and Prinz, {E. J.}",

note = "Funding Information: Manuscript received December 17, 1990; revised March 27, 1991. This work was supported by the ONR under Contract NOOO14-90-J-1316, by the NSF, and by IBM. J. C. Sturm and E. J. F'rinz are with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544. C. W. Magee is with Evans East, Inc., Plainsboro, NJ. IEEE Log Number 9100584.",

year = "1991",

month = jun,

doi = "10.1109/55.82068",

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AU - Prinz, E. J.

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N2 - Graded-base and uniform base Si/Si1-xGex/Si heterojunction bipolar transistors with near-ideal base and collector currents have been fabricated by rapid thermal chemical vapor deposition (RTCVD). The temperature dependences of the collector currents are shown to obey a simple analytical model that can be applied to devices which have arbitrary base profiles. The base currents are independent of base composition, and current gains in excess of 11 000 have been observed at 133 K.

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Graded-Base Si/Si _1-xGe_x/Si Heterojunction Bipolar Transistors Grown by Rapid Thermal Chemical Vapor Deposition with Near-Ideal Electrical Characteristics

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