Gigahertz Zinc-Oxide TFT-Based Oscillators

Yoni Mehlman, Can Wu, Sigurd Wagner, Naveen Verma, James C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A number of papers have been published over the past few years demonstrating metal-oxide thin-film-transistors (TFTs) with f-{T}\ \mathrm{and}/\mathrm{or}\ f-{MAX} over 1GHz [1]-[4]. However, these works have focused purely on device-level characterization and have not demonstrated gigahertz circuit operation. In this work, we demonstrate a large-area-compatible metal-oxide TFT-based cross-coupled LC oscillator operating at 1.25GHz, processed at flex-compatible temperatures (< 200^{\circ}\mathrm{C}). Achieving this required co-optimization of TFT and inductor dimensions/layouts, balancing device performance with parasitics (resistances, capacitances).

Original languageEnglish (US)
Title of host publication2019 Device Research Conference, DRC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages63-64
Number of pages2
ISBN (Electronic)9781728121123
DOIs
StatePublished - Jun 2019
Event2019 Device Research Conference, DRC 2019 - Ann Arbor, United States
Duration: Jun 23 2019Jun 26 2019

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2019-June
ISSN (Print)1548-3770

Conference

Conference2019 Device Research Conference, DRC 2019
CountryUnited States
CityAnn Arbor
Period6/23/196/26/19

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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