Gigahertz Zinc-Oxide TFT-Based Oscillators

Yoni Mehlman, Can Wu, Sigurd Wagner, Naveen Verma, James C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


A number of papers have been published over the past few years demonstrating metal-oxide thin-film-transistors (TFTs) with f-{T}\ \mathrm{and}/\mathrm{or}\ f-{MAX} over 1GHz [1]-[4]. However, these works have focused purely on device-level characterization and have not demonstrated gigahertz circuit operation. In this work, we demonstrate a large-area-compatible metal-oxide TFT-based cross-coupled LC oscillator operating at 1.25GHz, processed at flex-compatible temperatures (< 200^{\circ}\mathrm{C}). Achieving this required co-optimization of TFT and inductor dimensions/layouts, balancing device performance with parasitics (resistances, capacitances).

Original languageEnglish (US)
Title of host publication2019 Device Research Conference, DRC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)9781728121123
StatePublished - Jun 2019
Event2019 Device Research Conference, DRC 2019 - Ann Arbor, United States
Duration: Jun 23 2019Jun 26 2019

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Conference2019 Device Research Conference, DRC 2019
Country/TerritoryUnited States
CityAnn Arbor

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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