Gigahertz Zinc-Oxide TFT-Based Oscillators

Yoni Mehlman; Can Wu; Sigurd Wagner; Naveen Verma; James C. Sturm

doi:10.1109/DRC46940.2019.9046405

Gigahertz Zinc-Oxide TFT-Based Oscillators

Yoni Mehlman, Can Wu, Sigurd Wagner, Naveen Verma, James C. Sturm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

A number of papers have been published over the past few years demonstrating metal-oxide thin-film-transistors (TFTs) with f-{T}\ \mathrm{and}/\mathrm{or}\ f-{MAX} over 1GHz [1]-[4]. However, these works have focused purely on device-level characterization and have not demonstrated gigahertz circuit operation. In this work, we demonstrate a large-area-compatible metal-oxide TFT-based cross-coupled LC oscillator operating at 1.25GHz, processed at flex-compatible temperatures (< 200^{\circ}\mathrm{C}). Achieving this required co-optimization of TFT and inductor dimensions/layouts, balancing device performance with parasitics (resistances, capacitances).

Original language	English (US)
Title of host publication	2019 Device Research Conference, DRC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	63-64
Number of pages	2
ISBN (Electronic)	9781728121123
DOIs	https://doi.org/10.1109/DRC46940.2019.9046405
State	Published - Jun 2019
Event	2019 Device Research Conference, DRC 2019 - Ann Arbor, United States Duration: Jun 23 2019 → Jun 26 2019

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2019-June
ISSN (Print)	1548-3770

Conference

Conference	2019 Device Research Conference, DRC 2019
Country/Territory	United States
City	Ann Arbor
Period	6/23/19 → 6/26/19

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC46940.2019.9046405

Cite this

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title = "Gigahertz Zinc-Oxide TFT-Based Oscillators",

abstract = "A number of papers have been published over the past few years demonstrating metal-oxide thin-film-transistors (TFTs) with f-{T}\ \mathrm{and}/\mathrm{or}\ f-{MAX} over 1GHz [1]-[4]. However, these works have focused purely on device-level characterization and have not demonstrated gigahertz circuit operation. In this work, we demonstrate a large-area-compatible metal-oxide TFT-based cross-coupled LC oscillator operating at 1.25GHz, processed at flex-compatible temperatures (< 200^{\circ}\mathrm{C}). Achieving this required co-optimization of TFT and inductor dimensions/layouts, balancing device performance with parasitics (resistances, capacitances).",

author = "Yoni Mehlman and Can Wu and Sigurd Wagner and Naveen Verma and Sturm, {James C.}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Device Research Conference, DRC 2019 ; Conference date: 23-06-2019 Through 26-06-2019",

year = "2019",

month = jun,

doi = "10.1109/DRC46940.2019.9046405",

language = "English (US)",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "63--64",

booktitle = "2019 Device Research Conference, DRC 2019",

address = "United States",

}

Mehlman, Y, Wu, C, Wagner, S, Verma, N & Sturm, JC 2019, Gigahertz Zinc-Oxide TFT-Based Oscillators. in 2019 Device Research Conference, DRC 2019., 9046405, Device Research Conference - Conference Digest, DRC, vol. 2019-June, Institute of Electrical and Electronics Engineers Inc., pp. 63-64, 2019 Device Research Conference, DRC 2019, Ann Arbor, United States, 6/23/19. https://doi.org/10.1109/DRC46940.2019.9046405

Gigahertz Zinc-Oxide TFT-Based Oscillators. / Mehlman, Yoni; Wu, Can; Wagner, Sigurd et al.
2019 Device Research Conference, DRC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 63-64 9046405 (Device Research Conference - Conference Digest, DRC; Vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Gigahertz Zinc-Oxide TFT-Based Oscillators

AU - Mehlman, Yoni

AU - Wu, Can

AU - Wagner, Sigurd

AU - Verma, Naveen

AU - Sturm, James C.

PY - 2019/6

Y1 - 2019/6

N2 - A number of papers have been published over the past few years demonstrating metal-oxide thin-film-transistors (TFTs) with f-{T}\ \mathrm{and}/\mathrm{or}\ f-{MAX} over 1GHz [1]-[4]. However, these works have focused purely on device-level characterization and have not demonstrated gigahertz circuit operation. In this work, we demonstrate a large-area-compatible metal-oxide TFT-based cross-coupled LC oscillator operating at 1.25GHz, processed at flex-compatible temperatures (< 200^{\circ}\mathrm{C}). Achieving this required co-optimization of TFT and inductor dimensions/layouts, balancing device performance with parasitics (resistances, capacitances).

AB - A number of papers have been published over the past few years demonstrating metal-oxide thin-film-transistors (TFTs) with f-{T}\ \mathrm{and}/\mathrm{or}\ f-{MAX} over 1GHz [1]-[4]. However, these works have focused purely on device-level characterization and have not demonstrated gigahertz circuit operation. In this work, we demonstrate a large-area-compatible metal-oxide TFT-based cross-coupled LC oscillator operating at 1.25GHz, processed at flex-compatible temperatures (< 200^{\circ}\mathrm{C}). Achieving this required co-optimization of TFT and inductor dimensions/layouts, balancing device performance with parasitics (resistances, capacitances).

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M3 - Conference contribution

AN - SCOPUS:85083166900

T3 - Device Research Conference - Conference Digest, DRC

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BT - 2019 Device Research Conference, DRC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Device Research Conference, DRC 2019

Y2 - 23 June 2019 through 26 June 2019

ER -

Gigahertz Zinc-Oxide TFT-Based Oscillators

Abstract

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All Science Journal Classification (ASJC) codes

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