TY - GEN
T1 - Gigahertz Large-Area Electronic Devices and Circuits for Wireless Applications
AU - Wu, Can
AU - Ma, Yue
AU - Mehlman, Yoni
AU - Wagner, Sigurd
AU - Sturm, James C.
AU - Verma, Naveen
N1 - Publisher Copyright:
© 2021 FTFMD
PY - 2021
Y1 - 2021
N2 - We highlight recent progress in gigahertz large-area electronic (LAE) devices and circuits. On the device level, this relies on advanced design of zinc-oxide (ZnO) thin-film transistor, (TFTs), for which we consider three key figures of merit, i.e., unity current gain frequency fT and unity power gain frequency fMAX of active devices, and unity off-to-on-impedance ratio frequency fout-off of passive devices. On the cireuit level, this relies on resonant operation and exploiting high-quality-factor LAE inductor,. We demonstrate two gigahertz LAE cireuits, specifically oscillator, and RF switches.
AB - We highlight recent progress in gigahertz large-area electronic (LAE) devices and circuits. On the device level, this relies on advanced design of zinc-oxide (ZnO) thin-film transistor, (TFTs), for which we consider three key figures of merit, i.e., unity current gain frequency fT and unity power gain frequency fMAX of active devices, and unity off-to-on-impedance ratio frequency fout-off of passive devices. On the cireuit level, this relies on resonant operation and exploiting high-quality-factor LAE inductor,. We demonstrate two gigahertz LAE cireuits, specifically oscillator, and RF switches.
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M3 - Conference contribution
AN - SCOPUS:85125772895
T3 - Proceedings of AM-FPD 2021 - 28th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials
SP - 51
EP - 54
BT - Proceedings of AM-FPD 2021 - 28th International Workshop on Active-Matrix Flatpanel Displays and Devices
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 28th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2021
Y2 - 29 June 2021 through 2 July 2021
ER -