Giant low-temperature piezoreslstance effect in AlAs two-dimensional electrons

Y. P. Shkolnikov; K. Vakili; E. P. De Poortere; M. Shayegan

doi:10.1063/1.1808883

Giant low-temperature piezoreslstance effect in AlAs two-dimensional electrons

Y. P. Shkolnikov, K. Vakili, E. P. De Poortere, M. Shayegan

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24 Scopus citations

Abstract

We present piezoresistance measurements in modulation doped AlAs quantum wells where the two-dimensional electron system occupies two conduction band valleys with elliptical Fermi contours. Our data demonstrate that, at low temperatures, the strain gauge factor (the fractional change in resistance divided by the sample's fractional length change) in this system exceeds 10 000. Moreover, in the presence of a moderate magnetic field perpendicular to the plane of the two-dimensional system, gauge factors up to 56 000 can be achieved. The piezoresistance data can be explained qualitatively by a simple model that takes into account intervalley charge transfer.

Original language	English (US)
Pages (from-to)	3766-3768
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	17
DOIs	https://doi.org/10.1063/1.1808883
State	Published - Oct 25 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1808883

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title = "Giant low-temperature piezoreslstance effect in AlAs two-dimensional electrons",

abstract = "We present piezoresistance measurements in modulation doped AlAs quantum wells where the two-dimensional electron system occupies two conduction band valleys with elliptical Fermi contours. Our data demonstrate that, at low temperatures, the strain gauge factor (the fractional change in resistance divided by the sample's fractional length change) in this system exceeds 10 000. Moreover, in the presence of a moderate magnetic field perpendicular to the plane of the two-dimensional system, gauge factors up to 56 000 can be achieved. The piezoresistance data can be explained qualitatively by a simple model that takes into account intervalley charge transfer.",

author = "Shkolnikov, {Y. P.} and K. Vakili and {De Poortere}, {E. P.} and M. Shayegan",

note = "Funding Information: The authors thank the ARO, NSF, and the Humboldt Foundation for support, and K. Karrai for illuminating discussions.",

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T1 - Giant low-temperature piezoreslstance effect in AlAs two-dimensional electrons

AU - Shkolnikov, Y. P.

AU - Vakili, K.

AU - De Poortere, E. P.

AU - Shayegan, M.

N1 - Funding Information: The authors thank the ARO, NSF, and the Humboldt Foundation for support, and K. Karrai for illuminating discussions.

PY - 2004/10/25

Y1 - 2004/10/25

N2 - We present piezoresistance measurements in modulation doped AlAs quantum wells where the two-dimensional electron system occupies two conduction band valleys with elliptical Fermi contours. Our data demonstrate that, at low temperatures, the strain gauge factor (the fractional change in resistance divided by the sample's fractional length change) in this system exceeds 10 000. Moreover, in the presence of a moderate magnetic field perpendicular to the plane of the two-dimensional system, gauge factors up to 56 000 can be achieved. The piezoresistance data can be explained qualitatively by a simple model that takes into account intervalley charge transfer.

AB - We present piezoresistance measurements in modulation doped AlAs quantum wells where the two-dimensional electron system occupies two conduction band valleys with elliptical Fermi contours. Our data demonstrate that, at low temperatures, the strain gauge factor (the fractional change in resistance divided by the sample's fractional length change) in this system exceeds 10 000. Moreover, in the presence of a moderate magnetic field perpendicular to the plane of the two-dimensional system, gauge factors up to 56 000 can be achieved. The piezoresistance data can be explained qualitatively by a simple model that takes into account intervalley charge transfer.

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EP - 3768

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Giant low-temperature piezoreslstance effect in AlAs two-dimensional electrons

Abstract

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