Giant low-temperature piezoreslstance effect in AlAs two-dimensional electrons

Y. P. Shkolnikov, K. Vakili, E. P. De Poortere, M. Shayegan

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

We present piezoresistance measurements in modulation doped AlAs quantum wells where the two-dimensional electron system occupies two conduction band valleys with elliptical Fermi contours. Our data demonstrate that, at low temperatures, the strain gauge factor (the fractional change in resistance divided by the sample's fractional length change) in this system exceeds 10 000. Moreover, in the presence of a moderate magnetic field perpendicular to the plane of the two-dimensional system, gauge factors up to 56 000 can be achieved. The piezoresistance data can be explained qualitatively by a simple model that takes into account intervalley charge transfer.

Original languageEnglish (US)
Pages (from-to)3766-3768
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number17
DOIs
StatePublished - Oct 25 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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