Giant hole-phonon coupling in a strongly interacting two-dimensional (2D) hole system

X. P.A. Gao, G. S. Boebinger, A. P. Mills, A. P. Ramirez, L. N. Pfeiffer, K. W. West

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have studied the temperature dependent phonon emission rate P(T) of a strongly interacting (r s≥22) dilute 2D metallic GaAs hole system through carrier heating experiment. We observe that P(T) changes from P(T) ∼ T 5 to P(T) ∼ T 7 above 100mK, indicating a crossover from screened piezoelectric(PZ) coupling to screened deformation potential(DP) coupling for hole-phonon scattering. Quantitative comparison with theory shows that the short range DP coupling between the low density holes and phonons is more than ten times stronger than expected in the poorly understood 2D metallic state (E. Abrahams, S.V. Kravchenko, and M.P. Sarachik, Rev. Mod. Phys. 73, 251(2001)). The long range PZ coupling between holes and phonons, however, has an expected magnitude.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages449-450
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/TerritoryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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