Abstract
Electron hopping conduction along the growth-axis of a set of GaAs/Ga0.7Al0.3As superlattices reveals a giant longitudinal magnetoresistance (LMR) which increases as H2 up to 9 T, where R(H)/R(0) ∼ 4 in samples with the largest hybridization energy, δ, between wells. The LMR increases with δ and is essentially temperature-independent. Concomitant magnetic effects are observed in the electric-field-induced localization of the I-V characteristics. We show quantitatively that these features result from a new superlattice conduction mechanism which incorporates both in-plane and growth-axis contributions.
Original language | English (US) |
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Pages (from-to) | 687-691 |
Number of pages | 5 |
Journal | Solid State Communications |
Volume | 89 |
Issue number | 8 |
DOIs | |
State | Published - Feb 1994 |
All Science Journal Classification (ASJC) codes
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry