Giant growth axis longitudinal magnetoresistance from in-plane conduction in semiconductor superlattices

Mark Lee, Ned S. Wingreen, S. A. Solin, P. A. Wolff

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

Electron hopping conduction along the growth-axis of a set of GaAs/Ga0.7Al0.3As superlattices reveals a giant longitudinal magnetoresistance (LMR) which increases as H2 up to 9 T, where R(H)/R(0) ∼ 4 in samples with the largest hybridization energy, δ, between wells. The LMR increases with δ and is essentially temperature-independent. Concomitant magnetic effects are observed in the electric-field-induced localization of the I-V characteristics. We show quantitatively that these features result from a new superlattice conduction mechanism which incorporates both in-plane and growth-axis contributions.

Original languageEnglish (US)
Pages (from-to)687-691
Number of pages5
JournalSolid State Communications
Volume89
Issue number8
DOIs
StatePublished - Jan 1 1994

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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