Electron hopping conduction along the growth-axis of a set of GaAs/Ga0.7Al0.3As superlattices reveals a giant longitudinal magnetoresistance (LMR) which increases as H2 up to 9 T, where R(H)/R(0) ∼ 4 in samples with the largest hybridization energy, δ, between wells. The LMR increases with δ and is essentially temperature-independent. Concomitant magnetic effects are observed in the electric-field-induced localization of the I-V characteristics. We show quantitatively that these features result from a new superlattice conduction mechanism which incorporates both in-plane and growth-axis contributions.
|Original language||English (US)|
|Number of pages||5|
|Journal||Solid State Communications|
|State||Published - Jan 1 1994|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry