Generation of interface states at the Si-SiO2 interface

Research output: Contribution to journalConference articlepeer-review

Abstract

Recent results of the generation of defects at the Si-SiO2 interface are discussed. These defects are produced during the operation of silicon integrated circuits, and have taken on new importance as device geometries have been reduced. The injection of either electrons or holes into the SiO2 produces interface states, and so of the current models for the way in which these carriers cause the damage will be presented.

Original languageEnglish (US)
Pages (from-to)342-348
Number of pages7
JournalProceedings - The Electrochemical Society
Volume90
Issue number7
StatePublished - Dec 1 1990
EventProceedings of the Sixth International Symposium on Silicon Materials Science and Technology - Montreal, Que, Can
Duration: May 7 1990May 11 1990

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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