Recent results of the generation of defects at the Si-SiO2 interface are discussed. These defects are produced during the operation of silicon integrated circuits, and have taken on new importance as device geometries have been reduced. The injection of either electrons or holes into the SiO2 produces interface states, and so of the current models for the way in which these carriers cause the damage will be presented.
|Original language||English (US)|
|Number of pages||7|
|Journal||Proceedings - The Electrochemical Society|
|State||Published - Dec 1 1990|
|Event||Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology - Montreal, Que, Can|
Duration: May 7 1990 → May 11 1990
All Science Journal Classification (ASJC) codes