Generation of interface states at the Si-SiO2 interface

S. A. Lyon

Generation of interface states at the Si-SiO₂ interface

Research output: Contribution to journal › Conference article › peer-review

Abstract

Recent results of the generation of defects at the Si-SiO₂ interface are discussed. These defects are produced during the operation of silicon integrated circuits, and have taken on new importance as device geometries have been reduced. The injection of either electrons or holes into the SiO₂ produces interface states, and so of the current models for the way in which these carriers cause the damage will be presented.

Original language	English (US)
Pages (from-to)	342-348
Number of pages	7
Journal	Proceedings - The Electrochemical Society
Volume	90
Issue number	7
State	Published - 1990
Event	Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology - Montreal, Que, Can Duration: May 7 1990 → May 11 1990

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "Generation of interface states at the Si-SiO2 interface",

abstract = "Recent results of the generation of defects at the Si-SiO2 interface are discussed. These defects are produced during the operation of silicon integrated circuits, and have taken on new importance as device geometries have been reduced. The injection of either electrons or holes into the SiO2 produces interface states, and so of the current models for the way in which these carriers cause the damage will be presented.",

author = "Lyon, {S. A.}",

year = "1990",

language = "English (US)",

volume = "90",

pages = "342--348",

journal = "Proceedings - The Electrochemical Society",

issn = "0161-6374",

number = "7",

note = "Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology ; Conference date: 07-05-1990 Through 11-05-1990",

}

TY - JOUR

T1 - Generation of interface states at the Si-SiO2 interface

AU - Lyon, S. A.

PY - 1990

Y1 - 1990

N2 - Recent results of the generation of defects at the Si-SiO2 interface are discussed. These defects are produced during the operation of silicon integrated circuits, and have taken on new importance as device geometries have been reduced. The injection of either electrons or holes into the SiO2 produces interface states, and so of the current models for the way in which these carriers cause the damage will be presented.

AB - Recent results of the generation of defects at the Si-SiO2 interface are discussed. These defects are produced during the operation of silicon integrated circuits, and have taken on new importance as device geometries have been reduced. The injection of either electrons or holes into the SiO2 produces interface states, and so of the current models for the way in which these carriers cause the damage will be presented.

UR - http://www.scopus.com/inward/record.url?scp=0025590901&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025590901&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0025590901

SN - 0161-6374

VL - 90

SP - 342

EP - 348

JO - Proceedings - The Electrochemical Society

JF - Proceedings - The Electrochemical Society

IS - 7

T2 - Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology

Y2 - 7 May 1990 through 11 May 1990

ER -

Generation of interface states at the Si-SiO₂ interface

Abstract

All Science Journal Classification (ASJC) codes

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