Abstract
Type II short-period (GaAs)n-(AlAs)n superlattices have an indirect band gap with the X conduction band minimum in the AlAs layer and the G{cyrillic} valence band maximum in the GaAs layer. The transfer rate of excited electrons from G{cyrillic} to X is high compared to the direct G{cyrillic}-G{cyrillic} recombination rate, so the indirect X-G{cyrillic} transition predominates in the photoluminescence spectra. The G{cyrillic}-G{cyrillic} photoluminescence is very weak and has not been reliably reported for n<7. This paper reports clear G{cyrillic}-G{cyrillic} photoluminescence and its decay for n=1,2,3 and 4 (GaAs)n-(AlAs)n superlattices, and compares the positrons to theory as well as to measurements on the G{cyrillic}-G{cyrillic} transition by other techniques.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 133-136 |
| Number of pages | 4 |
| Journal | Journal of Luminescence |
| Volume | 50 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1991 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Biophysics
- Atomic and Molecular Physics, and Optics
- General Chemistry
- Biochemistry
- Condensed Matter Physics