G{cyrillic}-G{cyrillic} photoluminescence from type II short-period GaAs-AlAs superlattices

Weikun Ge, Janet L. Mackay, L. N. Pfeiffer, K. W. West

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Type II short-period (GaAs)n-(AlAs)n superlattices have an indirect band gap with the X conduction band minimum in the AlAs layer and the G{cyrillic} valence band maximum in the GaAs layer. The transfer rate of excited electrons from G{cyrillic} to X is high compared to the direct G{cyrillic}-G{cyrillic} recombination rate, so the indirect X-G{cyrillic} transition predominates in the photoluminescence spectra. The G{cyrillic}-G{cyrillic} photoluminescence is very weak and has not been reliably reported for n<7. This paper reports clear G{cyrillic}-G{cyrillic} photoluminescence and its decay for n=1,2,3 and 4 (GaAs)n-(AlAs)n superlattices, and compares the positrons to theory as well as to measurements on the G{cyrillic}-G{cyrillic} transition by other techniques.

Original languageEnglish (US)
Pages (from-to)133-136
Number of pages4
JournalJournal of Luminescence
Volume50
Issue number2
DOIs
StatePublished - 1991
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Biophysics
  • Atomic and Molecular Physics, and Optics
  • General Chemistry
  • Biochemistry
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'G{cyrillic}-G{cyrillic} photoluminescence from type II short-period GaAs-AlAs superlattices'. Together they form a unique fingerprint.

Cite this