Gate-defined two-dimensional hole and electron systems in an undoped InSb quantum well

Zijin Lei; Erik Cheah; Filip Krizek; Rüdiger Schott; Thomas Bähler; Peter Märki; Werner Wegscheider; Mansour Shayegan; Thomas Ihn; Klaus Ensslin

doi:10.1103/PhysRevResearch.5.013117

Gate-defined two-dimensional hole and electron systems in an undoped InSb quantum well

Zijin Lei
, Erik Cheah
, Filip Krizek
, Rüdiger Schott
, Thomas Bähler
, Peter Märki
, Werner Wegscheider
, Mansour Shayegan
, Thomas Ihn
, Klaus Ensslin

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak antilocalization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov-de Haas oscillations. Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. The g factor of the two-dimensional hole system decreases rapidly with increasing carrier density.

Original language	English (US)
Article number	013117
Journal	Physical Review Research
Volume	5
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevResearch.5.013117
State	Published - Jan 2023

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevResearch.5.013117

Cite this

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abstract = "Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak antilocalization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov-de Haas oscillations. Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. The g factor of the two-dimensional hole system decreases rapidly with increasing carrier density.",

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AU - Lei, Zijin

AU - Cheah, Erik

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AU - Schott, Rüdiger

AU - Bähler, Thomas

AU - Märki, Peter

AU - Wegscheider, Werner

AU - Shayegan, Mansour

AU - Ihn, Thomas

AU - Ensslin, Klaus

N1 - Publisher Copyright: © 2023 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

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N2 - Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak antilocalization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov-de Haas oscillations. Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. The g factor of the two-dimensional hole system decreases rapidly with increasing carrier density.

AB - Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak antilocalization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov-de Haas oscillations. Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. The g factor of the two-dimensional hole system decreases rapidly with increasing carrier density.

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Gate-defined two-dimensional hole and electron systems in an undoped InSb quantum well

Abstract

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