Gap states in pentacene thin film induced by inert gas exposure

Fabio Bussolotti, Satoshi Kera, Kazuhiro Kudo, Antoine Kahn, Nobuo Ueno

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Abstract

We studied gas-exposure effects on pentacene (Pn) films on SiO2 and Au(111) substrates by ultrahigh sensitivity photoelectron spectroscopy, which can detect the density of states of ∼1016 states eV-1 cm-3 comparable to electrical measurements. The results show the striking effects for Pn/SiO2: exposure to inert gas (N2 and Ar) produces a sharp rise in gap states from ∼1016 to ∼1018 states eV-1 cm-3 and pushes the Fermi level closer to the valence band (0.15-0.17 eV), as does exposure to O2 (0.20 eV), while no such gas-exposure effect is observed for Pn/Au(111). The results demonstrate that these gap states originate from small imperfections in the Pn packing structure, which are induced by gas penetration into the film through the crystal grain boundaries.

Original languageEnglish (US)
Article number267602
JournalPhysical review letters
Volume110
Issue number26
DOIs
StatePublished - Jun 25 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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