GaN (0001)-(1×1) surfaces: Composition and electronic properties

C. I. Wu, Antoine Kahn, N. Taskar, D. Dorman, D. Gallagher

Research output: Contribution to journalArticle

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Abstract

We use low energy electron diffraction, Auger electron spectroscopy, and ultraviolet and x-ray photoemission spectroscopy to study the surface structure, stoichiometry, and electronic properties of n- and p-type GaN (0001) grown by metal-organic chemical vapor deposition. Ordered (1 ×1) surfaces with nearly stoichiometric composition are prepared by nitrogen sputtering and annealing. The band bending is found to be 0.75±0.1 eV up and 0.75±0.1 eV down for n- and p-type samples, respectively. The work function, electron affinity, and Ga 3d core level binding energy are also determined.

Original languageEnglish (US)
Pages (from-to)4249-4252
Number of pages4
JournalJournal of Applied Physics
Volume83
Issue number8
DOIs
StatePublished - Apr 15 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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