TY - JOUR
T1 - GaN (0001)-(1×1) surfaces
T2 - Composition and electronic properties
AU - Wu, C. I.
AU - Kahn, A.
AU - Taskar, N.
AU - Dorman, D.
AU - Gallagher, D.
PY - 1998/4/15
Y1 - 1998/4/15
N2 - We use low energy electron diffraction, Auger electron spectroscopy, and ultraviolet and x-ray photoemission spectroscopy to study the surface structure, stoichiometry, and electronic properties of n- and p-type GaN (0001) grown by metal-organic chemical vapor deposition. Ordered (1 ×1) surfaces with nearly stoichiometric composition are prepared by nitrogen sputtering and annealing. The band bending is found to be 0.75±0.1 eV up and 0.75±0.1 eV down for n- and p-type samples, respectively. The work function, electron affinity, and Ga 3d core level binding energy are also determined.
AB - We use low energy electron diffraction, Auger electron spectroscopy, and ultraviolet and x-ray photoemission spectroscopy to study the surface structure, stoichiometry, and electronic properties of n- and p-type GaN (0001) grown by metal-organic chemical vapor deposition. Ordered (1 ×1) surfaces with nearly stoichiometric composition are prepared by nitrogen sputtering and annealing. The band bending is found to be 0.75±0.1 eV up and 0.75±0.1 eV down for n- and p-type samples, respectively. The work function, electron affinity, and Ga 3d core level binding energy are also determined.
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U2 - 10.1063/1.367182
DO - 10.1063/1.367182
M3 - Article
AN - SCOPUS:0000330622
SN - 0021-8979
VL - 83
SP - 4249
EP - 4252
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 8
ER -