Galvanomagnetic properties of lead-telluride quantum wells

J. Heremans; D. L. Partin; P. D. Dresselhaus; M. Shayegan; H. D. Drew

doi:10.1063/1.96661

Galvanomagnetic properties of lead-telluride quantum wells

J. Heremans, D. L. Partin, P. D. Dresselhaus, M. Shayegan, H. D. Drew

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Abstract

The first in-plane galvanomagnetic measurements on PbTe quantum wells are presented. The samples were 70-Å-wide wells sandwiched between lattice-matched PbEuSeTe layers which have 500 meV gaps. PbTe has a 187 meV gap at 0 K. The magnetoresistance and Hall effect were measured from 0 to 22 T and 0.5 to 300 K. The results can be explained if we assume that the wells are modulation doped p type to 3.7×10¹³ cm ^-2, and that there are 3×10¹² cm^-2 highly mobile holes which show Shubnikov-de Haas oscillations due to the splitting of size-quantized subbands into Landau levels. The influence of illumination is also shown: up to 10¹⁴ cm^-2 carriers with a lifetime of the order of 10 ² min can be photoexcited in the structure.

Original language	English (US)
Pages (from-to)	928-930
Number of pages	3
Journal	Applied Physics Letters
Volume	48
Issue number	14
DOIs	https://doi.org/10.1063/1.96661
State	Published - 1986

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.96661

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title = "Galvanomagnetic properties of lead-telluride quantum wells",

abstract = "The first in-plane galvanomagnetic measurements on PbTe quantum wells are presented. The samples were 70-{\AA}-wide wells sandwiched between lattice-matched PbEuSeTe layers which have 500 meV gaps. PbTe has a 187 meV gap at 0 K. The magnetoresistance and Hall effect were measured from 0 to 22 T and 0.5 to 300 K. The results can be explained if we assume that the wells are modulation doped p type to 3.7×1013 cm -2, and that there are 3×1012 cm-2 highly mobile holes which show Shubnikov-de Haas oscillations due to the splitting of size-quantized subbands into Landau levels. The influence of illumination is also shown: up to 1014 cm-2 carriers with a lifetime of the order of 10 2 min can be photoexcited in the structure.",

author = "J. Heremans and Partin, {D. L.} and Dresselhaus, {P. D.} and M. Shayegan and Drew, {H. D.}",

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doi = "10.1063/1.96661",

language = "English (US)",

volume = "48",

pages = "928--930",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Galvanomagnetic properties of lead-telluride quantum wells

AU - Heremans, J.

AU - Partin, D. L.

AU - Dresselhaus, P. D.

AU - Shayegan, M.

AU - Drew, H. D.

PY - 1986

Y1 - 1986

N2 - The first in-plane galvanomagnetic measurements on PbTe quantum wells are presented. The samples were 70-Å-wide wells sandwiched between lattice-matched PbEuSeTe layers which have 500 meV gaps. PbTe has a 187 meV gap at 0 K. The magnetoresistance and Hall effect were measured from 0 to 22 T and 0.5 to 300 K. The results can be explained if we assume that the wells are modulation doped p type to 3.7×1013 cm -2, and that there are 3×1012 cm-2 highly mobile holes which show Shubnikov-de Haas oscillations due to the splitting of size-quantized subbands into Landau levels. The influence of illumination is also shown: up to 1014 cm-2 carriers with a lifetime of the order of 10 2 min can be photoexcited in the structure.

AB - The first in-plane galvanomagnetic measurements on PbTe quantum wells are presented. The samples were 70-Å-wide wells sandwiched between lattice-matched PbEuSeTe layers which have 500 meV gaps. PbTe has a 187 meV gap at 0 K. The magnetoresistance and Hall effect were measured from 0 to 22 T and 0.5 to 300 K. The results can be explained if we assume that the wells are modulation doped p type to 3.7×1013 cm -2, and that there are 3×1012 cm-2 highly mobile holes which show Shubnikov-de Haas oscillations due to the splitting of size-quantized subbands into Landau levels. The influence of illumination is also shown: up to 1014 cm-2 carriers with a lifetime of the order of 10 2 min can be photoexcited in the structure.

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JF - Applied Physics Letters

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Galvanomagnetic properties of lead-telluride quantum wells

Abstract

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