GaInO3: A new transparent conducting oxide

R. J. Cava, Julia M. Phillips, J. Kwo, G. A. Thomas, R. B. Van Dover, S. A. Carter, J. J. Krajewski, W. F. Peck, J. H. Marshall, D. H. Rapkine

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Abstract

GaInO3, a layered material with the β Ga2O 3 crystal structure, can be doped with electrons through the introduction of oxygen deficiency, Sn doping for In, or Ge doping for Ga. At atomic doping levels of 10% or less, resistivities as low as 3 mΩ cm are obtained. In contrast to polycrystalline indium tin oxide (ITO), which is distinctly green, conductive gallium indium oxide is light grey with no visible coloration. Thin films of doped GaInO3 display good transparency over the whole optical window, superior to that of ITO in the green-blue region.

Original languageEnglish (US)
Pages (from-to)2071-2072
Number of pages2
JournalApplied Physics Letters
Volume64
Issue number16
DOIs
StatePublished - Dec 1 1994
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Cava, R. J., Phillips, J. M., Kwo, J., Thomas, G. A., Van Dover, R. B., Carter, S. A., Krajewski, J. J., Peck, W. F., Marshall, J. H., & Rapkine, D. H. (1994). GaInO3: A new transparent conducting oxide. Applied Physics Letters, 64(16), 2071-2072. https://doi.org/10.1063/1.111686