Gain spectra and stimulated emission in epitaxial (In,Al) GaN thin films

D. Wiesmann, I. Brener, L. N. Pfeiffer, M. A. Khan, C. J. Sun, C. S. Chang, W. Fang, S. L. Chuang

Research output: Contribution to journalConference articlepeer-review

Abstract

We measured the emission of (In,Al) GaN films under high intensity optical pumping both in the direction parallel and perpendicular to the film growth. In the edge emission geometry we determine the gain magnitude from the variable stripe length (VSL) method. We use the spontaneous emission collected perpendicular to the layer plane to calculate the spectral dependence of the gain. Theoretical calculations are in good agreement with those experimentally determined gain spectra. We also show that the observation of a stimulated emission peak perpendicular to the film is predominantly due to scattering of the in-plane stimulated emission but without ruling out contributions from microstructures in the films.

Original languageEnglish (US)
Pages (from-to)659-664
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume449
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 5 1996

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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