GaAs(110)-Al INTERFACES FORMED AT LOW TEMPERATURE.

C. R. Bonapace, K. Li, A. Kahn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

The authors report the first characterization of Al layers deposited on low temperature (100 degree K) cleaved GaAs(110). The surface mobility of Al is considerably reduced as the temperature is lowered, in agreement with estimates of Al hopping frequency at the surface of GaAs(110). Reduction in mobility leads to more homogeneous Al layers. Changes in the atomic geometry of the interface are detected with LEED. A preliminary analysis of the LEED data suggests that the GaAs(110) surface is unrelaxed by Al. Contact potential difference measurements of the evolution of the work function vs. Al coverage indicate the formation of an Al-surface dipole which is much larger than at room temperature.

Original languageEnglish (US)
Title of host publicationJournal de Physique (Paris), Colloque
Pages409-418
Number of pages10
Edition4
DOIs
StatePublished - 1984

Publication series

NameJournal de Physique (Paris), Colloque
Number4
Volume45
ISSN (Print)0449-1947

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Bonapace, C. R., Li, K., & Kahn, A. (1984). GaAs(110)-Al INTERFACES FORMED AT LOW TEMPERATURE. In Journal de Physique (Paris), Colloque (4 ed., pp. 409-418). (Journal de Physique (Paris), Colloque; Vol. 45, No. 4). https://doi.org/10.1051/jphyscol:1984562