Ga vacancies as compensating centers in homogeneously or δ-doped GaAs(Si) layers
- T. Laine
- , K. Saarinen
- , P. Hautojärvi
- , C. Corbel
- , L. N. Pfeiffer
- , P. H. Citrin
- , M. J. Ashwin
- , R. C. Newman
Research output: Contribution to journal › Article › peer-review