Ga vacancies as compensating centers in homogeneously or δ-doped GaAs(Si) layers

T. Laine; K. Saarinen; P. Hautojärvi; C. Corbel; L. N. Pfeiffer; P. H. Citrin; M. J. Ashwin; R. C. Newman

Ga vacancies as compensating centers in homogeneously or δ-doped GaAs(Si) layers

T. Laine, K. Saarinen, P. Hautojärvi, C. Corbel, L. N. Pfeiffer, P. H. Citrin, M. J. Ashwin, R. C. Newman

Research output: Contribution to journal › Article › peer-review

Abstract

The positron annihilation method was used to investigate the type and concentration of compensating centers in homogeneously or δ-doped GaAs(Si) layers grown by molecular beam epitaxy (MBE). The results show the presence of Ga vacancies and negative ions in both type of layers. The negative ion is attributed to the Si_As in homogeneously doped GaAs(Si) and to the Ga_As in δ-doped GaAs(Si). The concentrations of Ga vacancies and negative ions increase strongly when the Si concentration exceeds 5 × 10¹⁸ cm^-3 in homogeneously doped GaAs(Si) and 1 × 10¹³ cm^-2 in δ-doped GaAs(Si). Furthermore, the results in the superlattice indicate that the defects observed by the positron are located in undoped material between the delta planes.

Original language	English (US)
Pages (from-to)	879-884
Number of pages	6
Journal	Materials Science Forum
Volume	258-263
Issue number	PART 2
State	Published - 1997
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

Compensation
Positron spectroscopy
Superlattice

Cite this

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title = "Ga vacancies as compensating centers in homogeneously or δ-doped GaAs(Si) layers",

abstract = "The positron annihilation method was used to investigate the type and concentration of compensating centers in homogeneously or δ-doped GaAs(Si) layers grown by molecular beam epitaxy (MBE). The results show the presence of Ga vacancies and negative ions in both type of layers. The negative ion is attributed to the SiAs in homogeneously doped GaAs(Si) and to the GaAs in δ-doped GaAs(Si). The concentrations of Ga vacancies and negative ions increase strongly when the Si concentration exceeds 5 × 1018 cm-3 in homogeneously doped GaAs(Si) and 1 × 1013 cm-2 in δ-doped GaAs(Si). Furthermore, the results in the superlattice indicate that the defects observed by the positron are located in undoped material between the delta planes.",

keywords = "Compensation, Positron spectroscopy, Superlattice",

author = "T. Laine and K. Saarinen and P. Hautoj{\"a}rvi and C. Corbel and Pfeiffer, {L. N.} and Citrin, {P. H.} and Ashwin, {M. J.} and Newman, {R. C.}",

year = "1997",

language = "English (US)",

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pages = "879--884",

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TY - JOUR

T1 - Ga vacancies as compensating centers in homogeneously or δ-doped GaAs(Si) layers

AU - Laine, T.

AU - Saarinen, K.

AU - Hautojärvi, P.

AU - Corbel, C.

AU - Pfeiffer, L. N.

AU - Citrin, P. H.

AU - Ashwin, M. J.

AU - Newman, R. C.

PY - 1997

Y1 - 1997

N2 - The positron annihilation method was used to investigate the type and concentration of compensating centers in homogeneously or δ-doped GaAs(Si) layers grown by molecular beam epitaxy (MBE). The results show the presence of Ga vacancies and negative ions in both type of layers. The negative ion is attributed to the SiAs in homogeneously doped GaAs(Si) and to the GaAs in δ-doped GaAs(Si). The concentrations of Ga vacancies and negative ions increase strongly when the Si concentration exceeds 5 × 1018 cm-3 in homogeneously doped GaAs(Si) and 1 × 1013 cm-2 in δ-doped GaAs(Si). Furthermore, the results in the superlattice indicate that the defects observed by the positron are located in undoped material between the delta planes.

AB - The positron annihilation method was used to investigate the type and concentration of compensating centers in homogeneously or δ-doped GaAs(Si) layers grown by molecular beam epitaxy (MBE). The results show the presence of Ga vacancies and negative ions in both type of layers. The negative ion is attributed to the SiAs in homogeneously doped GaAs(Si) and to the GaAs in δ-doped GaAs(Si). The concentrations of Ga vacancies and negative ions increase strongly when the Si concentration exceeds 5 × 1018 cm-3 in homogeneously doped GaAs(Si) and 1 × 1013 cm-2 in δ-doped GaAs(Si). Furthermore, the results in the superlattice indicate that the defects observed by the positron are located in undoped material between the delta planes.

KW - Compensation

KW - Positron spectroscopy

KW - Superlattice

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M3 - Article

AN - SCOPUS:3743152904

SN - 0255-5476

VL - 258-263

SP - 879

EP - 884

JO - Materials Science Forum

JF - Materials Science Forum

IS - PART 2

ER -

Ga vacancies as compensating centers in homogeneously or δ-doped GaAs(Si) layers

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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