Fundamental mechanisms and doping effects in silicon infrared absorption for temperature measurement by infrared transmission

J. C. Sturm; C. M. Reaves

Fundamental mechanisms and doping effects in silicon infrared absorption for temperature measurement by infrared transmission

Research output: Contribution to journal › Conference article › peer-review

Abstract

Infrared absorption in silicon has been investigated at elevated temperatures. The fundamental absorption process in lightly to moderately doped silicon at 1.3 and 1.55 μm have been identified as band-to-band and free carrier mechanisms, respectively. The effects of heavy substrate doping on absorption at elevated temperature have also been studied. Significant deviations (10%) from transmission vs. temperature, as used to measure temperature in a Rapid Thermal Processing system, begin to occur with substrate doping levels of approximately 10¹⁸ cm^-3.

Original language	English (US)
Pages (from-to)	309-315
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1393
State	Published - 1991
Event	Rapid Thermal and Related Processing Techniques - Santa Clara, CA, USA Duration: Oct 2 1990 → Oct 3 1990

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Applied Mathematics
Electrical and Electronic Engineering
Computer Science Applications

Cite this

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abstract = "Infrared absorption in silicon has been investigated at elevated temperatures. The fundamental absorption process in lightly to moderately doped silicon at 1.3 and 1.55 μm have been identified as band-to-band and free carrier mechanisms, respectively. The effects of heavy substrate doping on absorption at elevated temperature have also been studied. Significant deviations (10%) from transmission vs. temperature, as used to measure temperature in a Rapid Thermal Processing system, begin to occur with substrate doping levels of approximately 1018 cm-3.",

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year = "1991",

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pages = "309--315",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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AU - Sturm, J. C.

AU - Reaves, C. M.

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AB - Infrared absorption in silicon has been investigated at elevated temperatures. The fundamental absorption process in lightly to moderately doped silicon at 1.3 and 1.55 μm have been identified as band-to-band and free carrier mechanisms, respectively. The effects of heavy substrate doping on absorption at elevated temperature have also been studied. Significant deviations (10%) from transmission vs. temperature, as used to measure temperature in a Rapid Thermal Processing system, begin to occur with substrate doping levels of approximately 1018 cm-3.

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AN - SCOPUS:0025839260

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SP - 309

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Rapid Thermal and Related Processing Techniques

Y2 - 2 October 1990 through 3 October 1990

ER -

Fundamental mechanisms and doping effects in silicon infrared absorption for temperature measurement by infrared transmission

Abstract

All Science Journal Classification (ASJC) codes

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