Infrared absorption in silicon has been investigated at elevated temperatures. The fundamental absorption process in lightly to moderately doped silicon at 1.3 and 1.55 μm have been identified as band-to-band and free carrier mechanisms, respectively. The effects of heavy substrate doping on absorption at elevated temperature have also been studied. Significant deviations (10%) from transmission vs. temperature, as used to measure temperature in a Rapid Thermal Processing system, begin to occur with substrate doping levels of approximately 1018 cm-3.
|Original language||English (US)|
|Number of pages||7|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - Jan 1 1991|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Condensed Matter Physics