Fundamental mechanisms and doping effects in silicon infrared absorption for temperature measurement by infrared transmission

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Abstract

Infrared absorption in silicon has been investigated at elevated temperatures. The fundamental absorption process in lightly to moderately doped silicon at 1.3 and 1.55 μm have been identified as band-to-band and free carrier mechanisms, respectively. The effects of heavy substrate doping on absorption at elevated temperature have also been studied. Significant deviations (10%) from transmission vs. temperature, as used to measure temperature in a Rapid Thermal Processing system, begin to occur with substrate doping levels of approximately 1018 cm-3.

Original languageEnglish (US)
Pages (from-to)309-315
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1393
StatePublished - Jan 1 1991

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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