Fundamental mechanisms and doping effects in silicon infrared absorption for temperature measurement by infrared transmission

James Christopher Sturm; C. M. Reaves

Fundamental mechanisms and doping effects in silicon infrared absorption for temperature measurement by infrared transmission

Research output: Contribution to journal › Article › peer-review

Abstract

Infrared absorption in silicon has been investigated at elevated temperatures. The fundamental absorption process in lightly to moderately doped silicon at 1.3 and 1.55 μm have been identified as band-to-band and free carrier mechanisms, respectively. The effects of heavy substrate doping on absorption at elevated temperature have also been studied. Significant deviations (10%) from transmission vs. temperature, as used to measure temperature in a Rapid Thermal Processing system, begin to occur with substrate doping levels of approximately 10¹⁸ cm^-3.

Original language	English (US)
Pages (from-to)	309-315
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1393
State	Published - Jan 1 1991

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

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N2 - Infrared absorption in silicon has been investigated at elevated temperatures. The fundamental absorption process in lightly to moderately doped silicon at 1.3 and 1.55 μm have been identified as band-to-band and free carrier mechanisms, respectively. The effects of heavy substrate doping on absorption at elevated temperature have also been studied. Significant deviations (10%) from transmission vs. temperature, as used to measure temperature in a Rapid Thermal Processing system, begin to occur with substrate doping levels of approximately 1018 cm-3.

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Fundamental mechanisms and doping effects in silicon infrared absorption for temperature measurement by infrared transmission

Abstract

All Science Journal Classification (ASJC) codes

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