Fundamental beam studies of radical enhanced atomic layer deposition of TiN

Frank Greer; D. Fraser; J. W. Coburn; David B. Graves

doi:10.1116/1.1524145

Fundamental beam studies of radical enhanced atomic layer deposition of TiN

Frank Greer, D. Fraser, J. W. Coburn, David B. Graves

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The radical enhanced atomic layer deposition (REALD) of TiN on Si was evaluated for substrate temperatures from 300 to 410 K. The results show that TiCl₄ selectively chemisorbs, forming a monolayer-like coverage on a Si and TiN surface for substrate temperatures ranging from 300 to 400 K. In addition, it was also shown that deuterium radicals abstract chlorine from the resulting Ti film at these temperatures, reducing the residual chlorine content of the films to below the detection limit of the analytical methods (∼0.3%).

Original language	English (US)
Pages (from-to)	96-105
Number of pages	10
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	1
DOIs	https://doi.org/10.1116/1.1524145
State	Published - Jan 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.1524145

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abstract = "The radical enhanced atomic layer deposition (REALD) of TiN on Si was evaluated for substrate temperatures from 300 to 410 K. The results show that TiCl4 selectively chemisorbs, forming a monolayer-like coverage on a Si and TiN surface for substrate temperatures ranging from 300 to 400 K. In addition, it was also shown that deuterium radicals abstract chlorine from the resulting Ti film at these temperatures, reducing the residual chlorine content of the films to below the detection limit of the analytical methods (∼0.3%).",

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AU - Coburn, J. W.

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N2 - The radical enhanced atomic layer deposition (REALD) of TiN on Si was evaluated for substrate temperatures from 300 to 410 K. The results show that TiCl4 selectively chemisorbs, forming a monolayer-like coverage on a Si and TiN surface for substrate temperatures ranging from 300 to 400 K. In addition, it was also shown that deuterium radicals abstract chlorine from the resulting Ti film at these temperatures, reducing the residual chlorine content of the films to below the detection limit of the analytical methods (∼0.3%).

AB - The radical enhanced atomic layer deposition (REALD) of TiN on Si was evaluated for substrate temperatures from 300 to 410 K. The results show that TiCl4 selectively chemisorbs, forming a monolayer-like coverage on a Si and TiN surface for substrate temperatures ranging from 300 to 400 K. In addition, it was also shown that deuterium radicals abstract chlorine from the resulting Ti film at these temperatures, reducing the residual chlorine content of the films to below the detection limit of the analytical methods (∼0.3%).

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Fundamental beam studies of radical enhanced atomic layer deposition of TiN

Abstract

All Science Journal Classification (ASJC) codes

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