TY - JOUR
T1 - Fully Integrated Optical Spectrometer in Visible and Near-IR in CMOS
AU - Hong, Lingyu
AU - Sengupta, Kaushik
N1 - Funding Information:
Manuscript received June 27, 2017; revised September 28, 2017; accepted October 22, 2017. Date of current version December 29, 2017. This work was supported in part by the National Science Foundation and in part by the Qualcomm Innovation Fellowship. This paper was recommended by Associate Editor R. Genov. (Corresponding author: Kaushik Sengupta.) The authors are with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 USA (e-mail: lingyu@princeton.edu; kaushiks@princeton.edu).
Publisher Copyright:
© 2007-2012 IEEE.
PY - 2017/12
Y1 - 2017/12
N2 - Optical spectrometry in the visible and near-infrared range has a wide range of applications in healthcare, sensing, imaging, and diagnostics. This paper presents the first fully integrated optical spectrometer in standard bulk CMOS process without custom fabrication, postprocessing, or any external optical passive structure such as lenses, gratings, collimators, or mirrors. The architecture exploits metal interconnect layers available in CMOS processes with subwavelength feature sizes to guide, manipulate, control, diffract light, integrated photodetector, and read-out circuitry to detect dispersed light, and then back-end signal processing for robust spectral estimation. The chip, realized in bulk 65-nm low power-CMOS process, measures 0.64 mm $\times$ 0.56 mm in active area, and achieves 1.4 nm in peak detection accuracy for continuous wave excitations between 500 and 830 nm. This paper demonstrates the ability to use these metal-optic nanostructures to miniaturize complex optical instrumentation into a new class of optics-free CMOS-based systems-on-chip in the visible and near-IR for various sensing and imaging applications.
AB - Optical spectrometry in the visible and near-infrared range has a wide range of applications in healthcare, sensing, imaging, and diagnostics. This paper presents the first fully integrated optical spectrometer in standard bulk CMOS process without custom fabrication, postprocessing, or any external optical passive structure such as lenses, gratings, collimators, or mirrors. The architecture exploits metal interconnect layers available in CMOS processes with subwavelength feature sizes to guide, manipulate, control, diffract light, integrated photodetector, and read-out circuitry to detect dispersed light, and then back-end signal processing for robust spectral estimation. The chip, realized in bulk 65-nm low power-CMOS process, measures 0.64 mm $\times$ 0.56 mm in active area, and achieves 1.4 nm in peak detection accuracy for continuous wave excitations between 500 and 830 nm. This paper demonstrates the ability to use these metal-optic nanostructures to miniaturize complex optical instrumentation into a new class of optics-free CMOS-based systems-on-chip in the visible and near-IR for various sensing and imaging applications.
KW - CMOS
KW - dispersion
KW - fluorescence
KW - gratings
KW - metal-optics
KW - nano-optics
KW - photodetecton
KW - spectrometry
KW - waveguides
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U2 - 10.1109/TBCAS.2017.2774603
DO - 10.1109/TBCAS.2017.2774603
M3 - Article
C2 - 29293416
AN - SCOPUS:85040720895
SN - 1932-4545
VL - 11
SP - 1176
EP - 1191
JO - IEEE transactions on biomedical circuits and systems
JF - IEEE transactions on biomedical circuits and systems
IS - 6
M1 - 8241906
ER -