fMAXExceeding 3 GHz in Self-Aligned Zinc-Oxide Thin-Film Transistors with Micron-Scale Gate Length

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fingerprint

Dive into the research topics of 'fMAXExceeding 3 GHz in Self-Aligned Zinc-Oxide Thin-Film Transistors with Micron-Scale Gate Length'. Together they form a unique fingerprint.

Material Science

Keyphrases

Engineering