fMAXExceeding 3 GHz in Self-Aligned Zinc-Oxide Thin-Film Transistors with Micron-Scale Gate Length

Yue Ma, Sigurd Wagner, Naveen Verma, James C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Large-area electronic (LAE) metal-oxide thin-film transistors (TFTs) with f{T} and/or f{MAX} beyond 1 GHz demonstrated over recent years [1]-[3] enable critical circuits and systems towards wireless applications in Internet of Things and 5G/6G (e.g., a 1-GHz phased array for far-field radiation beam steering [4]). Since most existing approaches towards GHz TFTs rely on improved charge-carrier mobility through high-temperature deposition of semiconductors and/or submicron TFT feature size achieved by electron-beam lithography, they are incompatible with low-cost, large-area, and flex-substrate fabrication of TFTs. By additional dependence on gate resistance R{G}, f{MAX} opens broader device engineering space to maintain large-area and flex-compatibility, and motivates f{MAX}-limited circuit/system topologies [4]. Here, we show that with optimal TFT bias voltages and reduced R{G} through TFT width scaling, a record-high f{MAX} exceeding 3 GHz is achieved in self-aligned zinc-oxide (ZnO) TFTs with gate length of \sim 1\ \mu m, patterned by photolithography, with a maximum process temperature of ∼200 °C. A high-frequency non-quasi-static TFT model [5] is used to guide the device engineering efforts towards this result.

Original languageEnglish (US)
Title of host publication2023 Device Research Conference, DRC 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350323108
StatePublished - 2023
Event2023 Device Research Conference, DRC 2023 - Santa Barbara, United States
Duration: Jun 25 2023Jun 28 2023

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Conference2023 Device Research Conference, DRC 2023
Country/TerritoryUnited States
CitySanta Barbara

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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