From monolayer to multilayer n-channel polymeric field-effect transistors with precise conformational order

Simone Fabiano; Chiara Musumeci; Zhihua Chen; Antonino Scandurra; He Wang; Yueh Lin Loo; Antonio Facchetti; Bruno Pignataro

doi:10.1002/adma.201103800

From monolayer to multilayer n-channel polymeric field-effect transistors with precise conformational order

Simone Fabiano, Chiara Musumeci, Zhihua Chen, Antonino Scandurra, He Wang, Yueh Lin Loo, Antonio Facchetti, Bruno Pignataro

Research output: Contribution to journal › Article › peer-review

116 Scopus citations

Abstract

Monolayer field-effect transistors based on a high-mobility n-type polymer are demonstrated. The accurate control of the long-range order by Langmuir-Schäfer (LS) deposition yields dense polymer packing exhibiting good injection properties, relevant current on/off ratio and carrier mobility in a staggered configuration. Layer-by-layer LS film transistors of increasing thickness are fabricated and their performance compared to those of spin-coated films.

Original language	English (US)
Pages (from-to)	951-956
Number of pages	6
Journal	Advanced Materials
Volume	24
Issue number	7
DOIs	https://doi.org/10.1002/adma.201103800
State	Published - Feb 14 2012

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
General Materials Science

Keywords

charge transport
layered materials
monolayer field-effect transistor
semiconducting polymers

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10.1002/adma.201103800

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@article{405b30ca1e754fc0bb7e8cfb7f08d7ca,

title = "From monolayer to multilayer n-channel polymeric field-effect transistors with precise conformational order",

abstract = "Monolayer field-effect transistors based on a high-mobility n-type polymer are demonstrated. The accurate control of the long-range order by Langmuir-Sch{\"a}fer (LS) deposition yields dense polymer packing exhibiting good injection properties, relevant current on/off ratio and carrier mobility in a staggered configuration. Layer-by-layer LS film transistors of increasing thickness are fabricated and their performance compared to those of spin-coated films.",

keywords = "charge transport, layered materials, monolayer field-effect transistor, semiconducting polymers",

author = "Simone Fabiano and Chiara Musumeci and Zhihua Chen and Antonino Scandurra and He Wang and Loo, \{Yueh Lin\} and Antonio Facchetti and Bruno Pignataro",

year = "2012",

month = feb,

day = "14",

doi = "10.1002/adma.201103800",

language = "English (US)",

volume = "24",

pages = "951--956",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "7",

}

TY - JOUR

T1 - From monolayer to multilayer n-channel polymeric field-effect transistors with precise conformational order

AU - Fabiano, Simone

AU - Musumeci, Chiara

AU - Chen, Zhihua

AU - Scandurra, Antonino

AU - Wang, He

AU - Loo, Yueh Lin

AU - Facchetti, Antonio

AU - Pignataro, Bruno

PY - 2012/2/14

Y1 - 2012/2/14

N2 - Monolayer field-effect transistors based on a high-mobility n-type polymer are demonstrated. The accurate control of the long-range order by Langmuir-Schäfer (LS) deposition yields dense polymer packing exhibiting good injection properties, relevant current on/off ratio and carrier mobility in a staggered configuration. Layer-by-layer LS film transistors of increasing thickness are fabricated and their performance compared to those of spin-coated films.

AB - Monolayer field-effect transistors based on a high-mobility n-type polymer are demonstrated. The accurate control of the long-range order by Langmuir-Schäfer (LS) deposition yields dense polymer packing exhibiting good injection properties, relevant current on/off ratio and carrier mobility in a staggered configuration. Layer-by-layer LS film transistors of increasing thickness are fabricated and their performance compared to those of spin-coated films.

KW - charge transport

KW - layered materials

KW - monolayer field-effect transistor

KW - semiconducting polymers

UR - https://www.scopus.com/pages/publications/84863011671

UR - https://www.scopus.com/inward/citedby.url?scp=84863011671&partnerID=8YFLogxK

U2 - 10.1002/adma.201103800

DO - 10.1002/adma.201103800

M3 - Article

C2 - 22250060

AN - SCOPUS:84863011671

SN - 0935-9648

VL - 24

SP - 951

EP - 956

JO - Advanced Materials

JF - Advanced Materials

IS - 7

ER -

From monolayer to multilayer n-channel polymeric field-effect transistors with precise conformational order

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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