Frequency tuning of VCSELs by a monolithically integrated modulator diode

C. Gmachl, A. Golshani, N. Finger, A. Kock, E. Gornik, J. F. Walker

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


The potentials of a multiquantum well-modulator diode for frequency tuning of VCSELs based on the quantum-confined Stark-effect as well as the impact of frequency tuning on output power and transversal mode spectra are discussed. This is of interest for high performance frequency tunable VCSELs. The samples consist of a p-n-p structure embedded between a Bragg-reflector at the bottom and a metal mirror on top. The laser diode contains either a GaAs/AlGaAs-double-heterojunction or three InGaAs quantum-wells in the active region. Two different types of modulator diodes are tested.

Original languageEnglish (US)
Pages (from-to)431-432
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
StatePublished - 1995
Externally publishedYes
EventProceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2) - San Francisco, CA, USA
Duration: Oct 30 1995Nov 2 1995

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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