The potentials of a multiquantum well-modulator diode for frequency tuning of VCSELs based on the quantum-confined Stark-effect as well as the impact of frequency tuning on output power and transversal mode spectra are discussed. This is of interest for high performance frequency tunable VCSELs. The samples consist of a p-n-p structure embedded between a Bragg-reflector at the bottom and a metal mirror on top. The laser diode contains either a GaAs/AlGaAs-double-heterojunction or three InGaAs quantum-wells in the active region. Two different types of modulator diodes are tested.
|Original language||English (US)|
|Number of pages||2|
|Journal||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|State||Published - Dec 1 1995|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering