Frequency tuning of a double-heterojunction AlGaAs/GaAs-vertical-cavity surface-emitting laser by a serial integrated in-cavity modulator diode

C. Gmachl; A. Köck; M. Rosenberger; E. Gornik; M. Micovic; J. F. Walker

doi:10.1063/1.108998

Frequency tuning of a double-heterojunction AlGaAs/GaAs-vertical-cavity surface-emitting laser by a serial integrated in-cavity modulator diode

C. Gmachl, A. Köck, M. Rosenberger, E. Gornik, M. Micovic, J. F. Walker

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The frequency tuning of a vertical-cavity surface-emitting laser through current injection is reported herein. This was achieved by integrating an AlGaAs graded-index p-n-modulator diode with a double-hetero GaAs/AlGaAs laser diode in a vertical cavity formed by an AlAs/AlGaAs-Bragg reflector and a metallic mirror. Experimental results show an obtained gradient of frequency shift up to 0.93 GHz/mA by the modulator current. This effect is at present restricted to approximately 40 mA due to thermal effects. A theoretical model based on the plasma effect and thermal effects agrees with the experimental values and predicts a maximum value for the gradient of frequency shift of 1.15 GHz/mA with the presented structure.

Original language	English (US)
Pages (from-to)	219-221
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	3
DOIs	https://doi.org/10.1063/1.108998
State	Published - 1993
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.108998

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@article{613ed7e5d77b48f3a28ea1608836e695,

title = "Frequency tuning of a double-heterojunction AlGaAs/GaAs-vertical-cavity surface-emitting laser by a serial integrated in-cavity modulator diode",

abstract = "The frequency tuning of a vertical-cavity surface-emitting laser through current injection is reported herein. This was achieved by integrating an AlGaAs graded-index p-n-modulator diode with a double-hetero GaAs/AlGaAs laser diode in a vertical cavity formed by an AlAs/AlGaAs-Bragg reflector and a metallic mirror. Experimental results show an obtained gradient of frequency shift up to 0.93 GHz/mA by the modulator current. This effect is at present restricted to approximately 40 mA due to thermal effects. A theoretical model based on the plasma effect and thermal effects agrees with the experimental values and predicts a maximum value for the gradient of frequency shift of 1.15 GHz/mA with the presented structure.",

author = "C. Gmachl and A. K{\"o}ck and M. Rosenberger and E. Gornik and M. Micovic and Walker, \{J. F.\}",

year = "1993",

doi = "10.1063/1.108998",

language = "English (US)",

volume = "62",

pages = "219--221",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Frequency tuning of a double-heterojunction AlGaAs/GaAs-vertical-cavity surface-emitting laser by a serial integrated in-cavity modulator diode

AU - Gmachl, C.

AU - Köck, A.

AU - Rosenberger, M.

AU - Gornik, E.

AU - Micovic, M.

AU - Walker, J. F.

PY - 1993

Y1 - 1993

N2 - The frequency tuning of a vertical-cavity surface-emitting laser through current injection is reported herein. This was achieved by integrating an AlGaAs graded-index p-n-modulator diode with a double-hetero GaAs/AlGaAs laser diode in a vertical cavity formed by an AlAs/AlGaAs-Bragg reflector and a metallic mirror. Experimental results show an obtained gradient of frequency shift up to 0.93 GHz/mA by the modulator current. This effect is at present restricted to approximately 40 mA due to thermal effects. A theoretical model based on the plasma effect and thermal effects agrees with the experimental values and predicts a maximum value for the gradient of frequency shift of 1.15 GHz/mA with the presented structure.

AB - The frequency tuning of a vertical-cavity surface-emitting laser through current injection is reported herein. This was achieved by integrating an AlGaAs graded-index p-n-modulator diode with a double-hetero GaAs/AlGaAs laser diode in a vertical cavity formed by an AlAs/AlGaAs-Bragg reflector and a metallic mirror. Experimental results show an obtained gradient of frequency shift up to 0.93 GHz/mA by the modulator current. This effect is at present restricted to approximately 40 mA due to thermal effects. A theoretical model based on the plasma effect and thermal effects agrees with the experimental values and predicts a maximum value for the gradient of frequency shift of 1.15 GHz/mA with the presented structure.

UR - https://www.scopus.com/pages/publications/21544475615

UR - https://www.scopus.com/inward/citedby.url?scp=21544475615&partnerID=8YFLogxK

U2 - 10.1063/1.108998

DO - 10.1063/1.108998

M3 - Article

AN - SCOPUS:21544475615

SN - 0003-6951

VL - 62

SP - 219

EP - 221

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Frequency tuning of a double-heterojunction AlGaAs/GaAs-vertical-cavity surface-emitting laser by a serial integrated in-cavity modulator diode

Abstract

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