Frequency tuning of a double-heterojunction AlGaAs/GaAs-vertical-cavity surface-emitting laser by a serial integrated in-cavity modulator diode

C. Gmachl, A. Köck, M. Rosenberger, E. Gornik, M. Micovic, J. F. Walker

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

The frequency tuning of a vertical-cavity surface-emitting laser through current injection is reported herein. This was achieved by integrating an AlGaAs graded-index p-n-modulator diode with a double-hetero GaAs/AlGaAs laser diode in a vertical cavity formed by an AlAs/AlGaAs-Bragg reflector and a metallic mirror. Experimental results show an obtained gradient of frequency shift up to 0.93 GHz/mA by the modulator current. This effect is at present restricted to approximately 40 mA due to thermal effects. A theoretical model based on the plasma effect and thermal effects agrees with the experimental values and predicts a maximum value for the gradient of frequency shift of 1.15 GHz/mA with the presented structure.

Original languageEnglish (US)
Pages (from-to)219-221
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number3
DOIs
StatePublished - Dec 1 1993
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Frequency tuning of a double-heterojunction AlGaAs/GaAs-vertical-cavity surface-emitting laser by a serial integrated in-cavity modulator diode'. Together they form a unique fingerprint.

  • Cite this