Frequency quenching of microwave-induced resistance oscillations in a high-mobility two-dimensional electron gas

S. A. Studenikin, A. S. Sachrajda, J. A. Gupta, Z. R. Wasilewski, O. M. Fedorych, M. Byszewski, D. K. Maude, M. Potemski, M. Hilke, K. W. West, L. N. Pfeiffer

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81 Scopus citations

Abstract

The frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs/AlGaAs structures to explore the limits at which these oscillations can be observed. It is found that in dc transport experiments at frequencies above 120 GHz, MIROs start to quench, while above 230 GHz, they completely disappear. The results will need to be understood theoretically but are qualitatively discussed within a model in which forced electronic charge oscillations (plasmons) play an intermediate role in the interaction process between the radiation and the single-particle electron excitations between Landau levels.

Original languageEnglish (US)
Article number165321
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume76
Issue number16
DOIs
StatePublished - Oct 30 2007
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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