Frequency dependence of amorphous silicon Schottky diodes for large-area rectification applications

Josue Sanz-Robinson; Warren Rieutort-Louis; Naveen Verma; Sigurd Wagner; James Christopher Sturm

doi:10.1109/DRC.2012.6257001

Frequency dependence of amorphous silicon Schottky diodes for large-area rectification applications

Josue Sanz-Robinson, Warren Rieutort-Louis, Naveen Verma, Sigurd Wagner, James Christopher Sturm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Schottky diodes can play a valuable role as rectifiers in Large-Area Electronics (LAE) systems and circuits. They can be used to recover a DC signal when an AC carrier is used to transmit signals between adjacent plastic electronic sheets through near-field wireless coupling [1], rectify DC power after AC transmission between sheets to provide power to sensors, and so forth. In this paper we describe: 1) the intrinsic frequency limits of Schottky diodes fabricated on hydrogenated amorphous silicon (a-Si:H); 2) circuit design strategies for using the diodes at frequencies far beyond their intrinsic limits; 3) and the application of these strategies to demonstrate, to the best of out knowledge, the first amorphous silicon (a-Si:H) full-wave rectifier, with an AC-to-DC power conversion efficiency (PCE) ranging from approximately 46% at 200 Hz to greater than 10 % at 1 MHz.

Original language	English (US)
Title of host publication	70th Device Research Conference, DRC 2012 - Conference Digest
Pages	135-136
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2012.6257001
State	Published - Oct 5 2012
Event	70th Device Research Conference, DRC 2012 - University Park, PA, United States Duration: Jun 18 2012 → Jun 20 2012

Other

Other	70th Device Research Conference, DRC 2012
Country/Territory	United States
City	University Park, PA
Period	6/18/12 → 6/20/12

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/DRC.2012.6257001

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title = "Frequency dependence of amorphous silicon Schottky diodes for large-area rectification applications",

abstract = "Schottky diodes can play a valuable role as rectifiers in Large-Area Electronics (LAE) systems and circuits. They can be used to recover a DC signal when an AC carrier is used to transmit signals between adjacent plastic electronic sheets through near-field wireless coupling [1], rectify DC power after AC transmission between sheets to provide power to sensors, and so forth. In this paper we describe: 1) the intrinsic frequency limits of Schottky diodes fabricated on hydrogenated amorphous silicon (a-Si:H); 2) circuit design strategies for using the diodes at frequencies far beyond their intrinsic limits; 3) and the application of these strategies to demonstrate, to the best of out knowledge, the first amorphous silicon (a-Si:H) full-wave rectifier, with an AC-to-DC power conversion efficiency (PCE) ranging from approximately 46% at 200 Hz to greater than 10 % at 1 MHz.",

author = "Josue Sanz-Robinson and Warren Rieutort-Louis and Naveen Verma and Sigurd Wagner and Sturm, {James Christopher}",

year = "2012",

month = oct,

day = "5",

doi = "10.1109/DRC.2012.6257001",

language = "English (US)",

isbn = "9781467311618",

pages = "135--136",

booktitle = "70th Device Research Conference, DRC 2012 - Conference Digest",

note = "70th Device Research Conference, DRC 2012 ; Conference date: 18-06-2012 Through 20-06-2012",

}

Sanz-Robinson, J, Rieutort-Louis, W, Verma, N, Wagner, S & Sturm, JC 2012, Frequency dependence of amorphous silicon Schottky diodes for large-area rectification applications. in 70th Device Research Conference, DRC 2012 - Conference Digest., 6257001, pp. 135-136, 70th Device Research Conference, DRC 2012, University Park, PA, United States, 6/18/12. https://doi.org/10.1109/DRC.2012.6257001

TY - GEN

T1 - Frequency dependence of amorphous silicon Schottky diodes for large-area rectification applications

AU - Sanz-Robinson, Josue

AU - Rieutort-Louis, Warren

AU - Verma, Naveen

AU - Wagner, Sigurd

AU - Sturm, James Christopher

PY - 2012/10/5

Y1 - 2012/10/5

N2 - Schottky diodes can play a valuable role as rectifiers in Large-Area Electronics (LAE) systems and circuits. They can be used to recover a DC signal when an AC carrier is used to transmit signals between adjacent plastic electronic sheets through near-field wireless coupling [1], rectify DC power after AC transmission between sheets to provide power to sensors, and so forth. In this paper we describe: 1) the intrinsic frequency limits of Schottky diodes fabricated on hydrogenated amorphous silicon (a-Si:H); 2) circuit design strategies for using the diodes at frequencies far beyond their intrinsic limits; 3) and the application of these strategies to demonstrate, to the best of out knowledge, the first amorphous silicon (a-Si:H) full-wave rectifier, with an AC-to-DC power conversion efficiency (PCE) ranging from approximately 46% at 200 Hz to greater than 10 % at 1 MHz.

AB - Schottky diodes can play a valuable role as rectifiers in Large-Area Electronics (LAE) systems and circuits. They can be used to recover a DC signal when an AC carrier is used to transmit signals between adjacent plastic electronic sheets through near-field wireless coupling [1], rectify DC power after AC transmission between sheets to provide power to sensors, and so forth. In this paper we describe: 1) the intrinsic frequency limits of Schottky diodes fabricated on hydrogenated amorphous silicon (a-Si:H); 2) circuit design strategies for using the diodes at frequencies far beyond their intrinsic limits; 3) and the application of these strategies to demonstrate, to the best of out knowledge, the first amorphous silicon (a-Si:H) full-wave rectifier, with an AC-to-DC power conversion efficiency (PCE) ranging from approximately 46% at 200 Hz to greater than 10 % at 1 MHz.

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U2 - 10.1109/DRC.2012.6257001

DO - 10.1109/DRC.2012.6257001

M3 - Conference contribution

AN - SCOPUS:84866930701

SN - 9781467311618

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EP - 136

BT - 70th Device Research Conference, DRC 2012 - Conference Digest

T2 - 70th Device Research Conference, DRC 2012

Y2 - 18 June 2012 through 20 June 2012

ER -

Frequency dependence of amorphous silicon Schottky diodes for large-area rectification applications

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