Frequency dependence of amorphous silicon Schottky diodes for large-area rectification applications

Josue Sanz-Robinson, Warren Rieutort-Louis, Naveen Verma, Sigurd Wagner, James C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


Schottky diodes can play a valuable role as rectifiers in Large-Area Electronics (LAE) systems and circuits. They can be used to recover a DC signal when an AC carrier is used to transmit signals between adjacent plastic electronic sheets through near-field wireless coupling [1], rectify DC power after AC transmission between sheets to provide power to sensors, and so forth. In this paper we describe: 1) the intrinsic frequency limits of Schottky diodes fabricated on hydrogenated amorphous silicon (a-Si:H); 2) circuit design strategies for using the diodes at frequencies far beyond their intrinsic limits; 3) and the application of these strategies to demonstrate, to the best of out knowledge, the first amorphous silicon (a-Si:H) full-wave rectifier, with an AC-to-DC power conversion efficiency (PCE) ranging from approximately 46% at 200 Hz to greater than 10 % at 1 MHz.

Original languageEnglish (US)
Title of host publication70th Device Research Conference, DRC 2012 - Conference Digest
Number of pages2
StatePublished - 2012
Event70th Device Research Conference, DRC 2012 - University Park, PA, United States
Duration: Jun 18 2012Jun 20 2012

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other70th Device Research Conference, DRC 2012
Country/TerritoryUnited States
CityUniversity Park, PA

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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