Abstract
Schottky diodes can play a valuable role as rectifiers in Large-Area Electronics (LAE) systems and circuits. They can be used to recover a DC signal when an AC carrier is used to transmit signals between adjacent plastic electronic sheets through near-field wireless coupling [1], rectify DC power after AC transmission between sheets to provide power to sensors, and so forth. In this paper we describe: 1) the intrinsic frequency limits of Schottky diodes fabricated on hydrogenated amorphous silicon (a-Si:H); 2) circuit design strategies for using the diodes at frequencies far beyond their intrinsic limits; 3) and the application of these strategies to demonstrate, to the best of out knowledge, the first amorphous silicon (a-Si:H) full-wave rectifier, with an AC-to-DC power conversion efficiency (PCE) ranging from approximately 46% at 200 Hz to greater than 10 % at 1 MHz.
Original language | English (US) |
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Title of host publication | 70th Device Research Conference, DRC 2012 - Conference Digest |
Pages | 135-136 |
Number of pages | 2 |
DOIs | |
State | Published - Oct 5 2012 |
Event | 70th Device Research Conference, DRC 2012 - University Park, PA, United States Duration: Jun 18 2012 → Jun 20 2012 |
Other
Other | 70th Device Research Conference, DRC 2012 |
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Country/Territory | United States |
City | University Park, PA |
Period | 6/18/12 → 6/20/12 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering