Frequency dependence of amorphous silicon Schottky diodes for large-area rectification applications

Josue Sanz-Robinson; Warren Rieutort-Louis; Naveen Verma; Sigurd Wagner; James C. Sturm

doi:10.1109/DRC.2012.6257001

Frequency dependence of amorphous silicon Schottky diodes for large-area rectification applications

Josue Sanz-Robinson, Warren Rieutort-Louis, Naveen Verma, Sigurd Wagner, James C. Sturm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Schottky diodes can play a valuable role as rectifiers in Large-Area Electronics (LAE) systems and circuits. They can be used to recover a DC signal when an AC carrier is used to transmit signals between adjacent plastic electronic sheets through near-field wireless coupling [1], rectify DC power after AC transmission between sheets to provide power to sensors, and so forth. In this paper we describe: 1) the intrinsic frequency limits of Schottky diodes fabricated on hydrogenated amorphous silicon (a-Si:H); 2) circuit design strategies for using the diodes at frequencies far beyond their intrinsic limits; 3) and the application of these strategies to demonstrate, to the best of out knowledge, the first amorphous silicon (a-Si:H) full-wave rectifier, with an AC-to-DC power conversion efficiency (PCE) ranging from approximately 46% at 200 Hz to greater than 10 % at 1 MHz.

Original language	English (US)
Title of host publication	70th Device Research Conference, DRC 2012 - Conference Digest
Pages	135-136
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2012.6257001
State	Published - 2012
Event	70th Device Research Conference, DRC 2012 - University Park, PA, United States Duration: Jun 18 2012 → Jun 20 2012

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	70th Device Research Conference, DRC 2012
Country/Territory	United States
City	University Park, PA
Period	6/18/12 → 6/20/12

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2012.6257001

Cite this

Sanz-Robinson, J., Rieutort-Louis, W., Verma, N., Wagner, S., & Sturm, J. C. (2012). Frequency dependence of amorphous silicon Schottky diodes for large-area rectification applications. In 70th Device Research Conference, DRC 2012 - Conference Digest (pp. 135-136). Article 6257001 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2012.6257001

@inproceedings{60cdf6da8b974b3a81b65370cff608f5,

title = "Frequency dependence of amorphous silicon Schottky diodes for large-area rectification applications",

abstract = "Schottky diodes can play a valuable role as rectifiers in Large-Area Electronics (LAE) systems and circuits. They can be used to recover a DC signal when an AC carrier is used to transmit signals between adjacent plastic electronic sheets through near-field wireless coupling [1], rectify DC power after AC transmission between sheets to provide power to sensors, and so forth. In this paper we describe: 1) the intrinsic frequency limits of Schottky diodes fabricated on hydrogenated amorphous silicon (a-Si:H); 2) circuit design strategies for using the diodes at frequencies far beyond their intrinsic limits; 3) and the application of these strategies to demonstrate, to the best of out knowledge, the first amorphous silicon (a-Si:H) full-wave rectifier, with an AC-to-DC power conversion efficiency (PCE) ranging from approximately 46% at 200 Hz to greater than 10 % at 1 MHz.",

author = "Josue Sanz-Robinson and Warren Rieutort-Louis and Naveen Verma and Sigurd Wagner and Sturm, {James C.}",

year = "2012",

doi = "10.1109/DRC.2012.6257001",

language = "English (US)",

isbn = "9781467311618",

series = "Device Research Conference - Conference Digest, DRC",

pages = "135--136",

booktitle = "70th Device Research Conference, DRC 2012 - Conference Digest",

note = "70th Device Research Conference, DRC 2012 ; Conference date: 18-06-2012 Through 20-06-2012",

}

Sanz-Robinson, J, Rieutort-Louis, W, Verma, N, Wagner, S & Sturm, JC 2012, Frequency dependence of amorphous silicon Schottky diodes for large-area rectification applications. in 70th Device Research Conference, DRC 2012 - Conference Digest., 6257001, Device Research Conference - Conference Digest, DRC, pp. 135-136, 70th Device Research Conference, DRC 2012, University Park, PA, United States, 6/18/12. https://doi.org/10.1109/DRC.2012.6257001

Frequency dependence of amorphous silicon Schottky diodes for large-area rectification applications. / Sanz-Robinson, Josue; Rieutort-Louis, Warren; Verma, Naveen et al.
70th Device Research Conference, DRC 2012 - Conference Digest. 2012. p. 135-136 6257001 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Frequency dependence of amorphous silicon Schottky diodes for large-area rectification applications

AU - Sanz-Robinson, Josue

AU - Rieutort-Louis, Warren

AU - Verma, Naveen

AU - Wagner, Sigurd

AU - Sturm, James C.

PY - 2012

Y1 - 2012

N2 - Schottky diodes can play a valuable role as rectifiers in Large-Area Electronics (LAE) systems and circuits. They can be used to recover a DC signal when an AC carrier is used to transmit signals between adjacent plastic electronic sheets through near-field wireless coupling [1], rectify DC power after AC transmission between sheets to provide power to sensors, and so forth. In this paper we describe: 1) the intrinsic frequency limits of Schottky diodes fabricated on hydrogenated amorphous silicon (a-Si:H); 2) circuit design strategies for using the diodes at frequencies far beyond their intrinsic limits; 3) and the application of these strategies to demonstrate, to the best of out knowledge, the first amorphous silicon (a-Si:H) full-wave rectifier, with an AC-to-DC power conversion efficiency (PCE) ranging from approximately 46% at 200 Hz to greater than 10 % at 1 MHz.

AB - Schottky diodes can play a valuable role as rectifiers in Large-Area Electronics (LAE) systems and circuits. They can be used to recover a DC signal when an AC carrier is used to transmit signals between adjacent plastic electronic sheets through near-field wireless coupling [1], rectify DC power after AC transmission between sheets to provide power to sensors, and so forth. In this paper we describe: 1) the intrinsic frequency limits of Schottky diodes fabricated on hydrogenated amorphous silicon (a-Si:H); 2) circuit design strategies for using the diodes at frequencies far beyond their intrinsic limits; 3) and the application of these strategies to demonstrate, to the best of out knowledge, the first amorphous silicon (a-Si:H) full-wave rectifier, with an AC-to-DC power conversion efficiency (PCE) ranging from approximately 46% at 200 Hz to greater than 10 % at 1 MHz.

UR - http://www.scopus.com/inward/record.url?scp=84866930701&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866930701&partnerID=8YFLogxK

U2 - 10.1109/DRC.2012.6257001

DO - 10.1109/DRC.2012.6257001

M3 - Conference contribution

AN - SCOPUS:84866930701

SN - 9781467311618

T3 - Device Research Conference - Conference Digest, DRC

SP - 135

EP - 136

BT - 70th Device Research Conference, DRC 2012 - Conference Digest

T2 - 70th Device Research Conference, DRC 2012

Y2 - 18 June 2012 through 20 June 2012

ER -

Frequency dependence of amorphous silicon Schottky diodes for large-area rectification applications

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this