Frequency dependence of amorphous silicon Schottky diodes for large-area rectification applications

Josue Sanz-Robinson, Warren Rieutort-Louis, Naveen Verma, Sigurd Wagner, James Christopher Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Schottky diodes can play a valuable role as rectifiers in Large-Area Electronics (LAE) systems and circuits. They can be used to recover a DC signal when an AC carrier is used to transmit signals between adjacent plastic electronic sheets through near-field wireless coupling [1], rectify DC power after AC transmission between sheets to provide power to sensors, and so forth. In this paper we describe: 1) the intrinsic frequency limits of Schottky diodes fabricated on hydrogenated amorphous silicon (a-Si:H); 2) circuit design strategies for using the diodes at frequencies far beyond their intrinsic limits; 3) and the application of these strategies to demonstrate, to the best of out knowledge, the first amorphous silicon (a-Si:H) full-wave rectifier, with an AC-to-DC power conversion efficiency (PCE) ranging from approximately 46% at 200 Hz to greater than 10 % at 1 MHz.

Original languageEnglish (US)
Title of host publication70th Device Research Conference, DRC 2012 - Conference Digest
Pages135-136
Number of pages2
DOIs
StatePublished - Oct 5 2012
Event70th Device Research Conference, DRC 2012 - University Park, PA, United States
Duration: Jun 18 2012Jun 20 2012

Other

Other70th Device Research Conference, DRC 2012
CountryUnited States
CityUniversity Park, PA
Period6/18/126/20/12

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Frequency dependence of amorphous silicon Schottky diodes for large-area rectification applications'. Together they form a unique fingerprint.

  • Cite this

    Sanz-Robinson, J., Rieutort-Louis, W., Verma, N., Wagner, S., & Sturm, J. C. (2012). Frequency dependence of amorphous silicon Schottky diodes for large-area rectification applications. In 70th Device Research Conference, DRC 2012 - Conference Digest (pp. 135-136). [6257001] https://doi.org/10.1109/DRC.2012.6257001