Free-carrier effect on exciton dynamics in GaAs/AlxGa1-xAs quantum wells

B. M. Ashkinadze, E. Linder, E. Cohen, Arza Ron, L. N. Pfeiffer

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

We report on a strong modulation of the resonantly excited (e1:hh1)1S exciton photoluminescence and LO-phonon Raman scattering by an additional, weak, above-gap radiation at low temperatures. These effects are attributed to the interaction between excitons and cold, free carriers (in the e-h pair density range of 105<n<107 cm-2) that causes an exciton population redistribution and an increased dephasing rate. The analysis indicates that localized and delocalized exciton states span the same spectral range. It also yields the spectral dependence of the additional exciton dephasing that is due to the interaction with free carriers.

Original languageEnglish (US)
Pages (from-to)1938-1941
Number of pages4
JournalPhysical Review B
Volume51
Issue number3
DOIs
StatePublished - 1995
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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