Fractional Quantum Hall State at Filling Factor ν=1/4 in Ultra-High-Quality GaAs Two-Dimensional Hole Systems

Chengyu Wang, A. Gupta, S. K. Singh, P. T. Madathil, Y. J. Chung, L. N. Pfeiffer, K. W. Baldwin, R. Winkler, M. Shayegan

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Single-component fractional quantum Hall states (FQHSs) at even-denominator filling factors may host non-Abelian quasiparticles that are considered to be building blocks of topological quantum computers. Such states, however, are rarely observed in the lowest-energy Landau level, namely at filling factors ν<1. Here, we report evidence for an even-denominator FQHS at ν=1/4 in ultra-high-quality two-dimensional hole systems confined to modulation-doped GaAs quantum wells. We observe a deep minimum in the longitudinal resistance at ν=1/4, superimposed on a highly insulating background, suggesting a close competition between the ν=1/4 FQHS and the magnetic-field-induced, pinned Wigner solid states. Our experimental observations are consistent with the very recent theoretical calculations that predict that substantial Landau level mixing, caused by the large hole effective mass, can induce composite fermion pairing and lead to a non-Abelian FQHS at ν=1/4. Our results demonstrate that Landau level mixing can provide a very potent means for tuning the interaction between composite fermions and creating new non-Abelian FQHSs.

Original languageEnglish (US)
Article number266502
JournalPhysical review letters
Volume131
Issue number26
DOIs
StatePublished - Dec 29 2023

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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