Fractional quantum Hall effect in a high-mobility GaAs/Al xGa1-xAs multiple quantum well heterostructure

M. Shayegan; J. K. Wang; M. Santos; T. Sajoto; B. B. Goldberg

doi:10.1063/1.100820

Fractional quantum Hall effect in a high-mobility GaAs/Al _xGa_1-xAs multiple quantum well heterostructure

M. Shayegan, J. K. Wang, M. Santos, T. Sajoto, B. B. Goldberg

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11 Scopus citations

Abstract

We report the realization of a high mobility [μ≅4.8×10 ⁵ cm²/(V s)] selectively doped GaAs/Al_xGa _1-xAs multiple quantum well structure with low density (n_s ≅1.7×10¹¹ cm^-2 for each of the 85 wells) grown by molecular beam epitaxy. The activation energy for the fractional quantum Hall state at the Landau-level filling factor ν=1/3 is Δ≅2 K, the highest value ever reported for any multiple quantum well structure. Such a structure is nearly ideal for studies of the thermal properties of the two-dimensional electron system in the fractional quantum Hall regime.

Original language	English (US)
Pages (from-to)	27-29
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	1
DOIs	https://doi.org/10.1063/1.100820
State	Published - 1989

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.100820

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abstract = "We report the realization of a high mobility [μ≅4.8×10 5 cm2/(V s)] selectively doped GaAs/AlxGa 1-xAs multiple quantum well structure with low density (ns ≅1.7×1011 cm-2 for each of the 85 wells) grown by molecular beam epitaxy. The activation energy for the fractional quantum Hall state at the Landau-level filling factor ν=1/3 is Δ≅2 K, the highest value ever reported for any multiple quantum well structure. Such a structure is nearly ideal for studies of the thermal properties of the two-dimensional electron system in the fractional quantum Hall regime.",

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AU - Shayegan, M.

AU - Wang, J. K.

AU - Santos, M.

AU - Sajoto, T.

AU - Goldberg, B. B.

PY - 1989

Y1 - 1989

N2 - We report the realization of a high mobility [μ≅4.8×10 5 cm2/(V s)] selectively doped GaAs/AlxGa 1-xAs multiple quantum well structure with low density (ns ≅1.7×1011 cm-2 for each of the 85 wells) grown by molecular beam epitaxy. The activation energy for the fractional quantum Hall state at the Landau-level filling factor ν=1/3 is Δ≅2 K, the highest value ever reported for any multiple quantum well structure. Such a structure is nearly ideal for studies of the thermal properties of the two-dimensional electron system in the fractional quantum Hall regime.

AB - We report the realization of a high mobility [μ≅4.8×10 5 cm2/(V s)] selectively doped GaAs/AlxGa 1-xAs multiple quantum well structure with low density (ns ≅1.7×1011 cm-2 for each of the 85 wells) grown by molecular beam epitaxy. The activation energy for the fractional quantum Hall state at the Landau-level filling factor ν=1/3 is Δ≅2 K, the highest value ever reported for any multiple quantum well structure. Such a structure is nearly ideal for studies of the thermal properties of the two-dimensional electron system in the fractional quantum Hall regime.

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Fractional quantum Hall effect in a high-mobility GaAs/Al _xGa_1-xAs multiple quantum well heterostructure

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