We report the realization of a high mobility [μ≅4.8×10 5 cm2/(V s)] selectively doped GaAs/AlxGa 1-xAs multiple quantum well structure with low density (ns ≅1.7×1011 cm-2 for each of the 85 wells) grown by molecular beam epitaxy. The activation energy for the fractional quantum Hall state at the Landau-level filling factor ν=1/3 is Δ≅2 K, the highest value ever reported for any multiple quantum well structure. Such a structure is nearly ideal for studies of the thermal properties of the two-dimensional electron system in the fractional quantum Hall regime.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1989|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)