Fractional quantum Hall effect at Landau level filling ν=4/11

W. Pan, K. W. Baldwin, K. W. West, L. N. Pfeiffer, D. C. Tsui

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Abstract

We report low-temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling ν=4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance Rxx and a quantized Hall resistance Rxy, within 1% of the expected value of h/(4/11)e2, were observed. The temperature dependence of the Rxx minimum at 4/11 yields an activation energy gap of ∼7mK. Developing Hall plateaus were also observed at the neighboring states at ν=3/8and5/13.

Original languageEnglish (US)
Article number041301
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number4
DOIs
StatePublished - Jan 9 2015

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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