TY - JOUR
T1 - Fractional quantum hall effect at high fillings in a two-subband electron system
AU - Shabani, J.
AU - Liu, Y.
AU - Shayegan, M.
PY - 2010/12/9
Y1 - 2010/12/9
N2 - Magnetotransport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high fillings (ν>2) are distinctly different from those of a single-subband system. Notably, when the Fermi energy lies in the ground state Landau level of either of the subbands, no quantum Hall states are seen at the even-denominator ν=5/2 and 7/2 fillings; instead, the observed states are at ν=[i+p/(2p±1)], where i=2,3,4 and p=1,2,3, and include several new states at ν=13/5, 17/5, 18/5, 25/7, and 14/3.
AB - Magnetotransport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high fillings (ν>2) are distinctly different from those of a single-subband system. Notably, when the Fermi energy lies in the ground state Landau level of either of the subbands, no quantum Hall states are seen at the even-denominator ν=5/2 and 7/2 fillings; instead, the observed states are at ν=[i+p/(2p±1)], where i=2,3,4 and p=1,2,3, and include several new states at ν=13/5, 17/5, 18/5, 25/7, and 14/3.
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U2 - 10.1103/PhysRevLett.105.246805
DO - 10.1103/PhysRevLett.105.246805
M3 - Article
C2 - 21231548
AN - SCOPUS:78649985215
SN - 0031-9007
VL - 105
JO - Physical review letters
JF - Physical review letters
IS - 24
M1 - 246805
ER -