Fractional quantum hall effect at ν = 1 / 2 in hole systems confined to GaAs quantum wells

Yang Liu, A. L. Graninger, S. Hasdemir, M. Shayegan, L. N. Pfeiffer, K. W. West, K. W. Baldwin, R. Winkler

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17 Scopus citations

Abstract

We observe the fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor ν=1/2 in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayerlike charge distributions. The ν=1/2 FQHE is stable when the charge distribution is symmetric and only in a range of intermediate densities, qualitatively similar to what is seen in two-dimensional electron systems confined to approximately twice wider GaAs quantum wells. Despite the complexity of the hole Landau level structure, originating from the coexistence and mixing of the heavy- and light-hole states, we find the hole ν=1/2 FQHE to be consistent with a two-component, Halperin-Laughlin (Ψ331) state.

Original languageEnglish (US)
Article number046804
JournalPhysical review letters
Volume112
Issue number4
DOIs
StatePublished - Jan 29 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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