Formation of unintentional dots in small Si nanostructures

L. P. Rokhinson, L. J. Guo, S. Y. Chou, D. C. Tsui

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

We studied charge transport through lithographycally defined Si quantum dots. At low temperatures multi-dot transport is observed. In particular, we analyzed transport through double-dot devices. The data provide compelling evidence that the extra dots are formed within the gate oxide.

Original languageEnglish (US)
Pages (from-to)413-417
Number of pages5
JournalSuperlattices and Microstructures
Volume28
Issue number5-6
DOIs
StatePublished - Nov 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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