Formation of unintentional dots in small Si nanostructures

L. P. Rokhinson; L. J. Guo; S. Y. Chou; D. C. Tsui

doi:10.1006/spmi.2000.0942

Formation of unintentional dots in small Si nanostructures

L. P. Rokhinson, L. J. Guo, S. Y. Chou, D. C. Tsui

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We studied charge transport through lithographycally defined Si quantum dots. At low temperatures multi-dot transport is observed. In particular, we analyzed transport through double-dot devices. The data provide compelling evidence that the extra dots are formed within the gate oxide.

Original language	English (US)
Pages (from-to)	413-417
Number of pages	5
Journal	Superlattices and Microstructures
Volume	28
Issue number	5-6
DOIs	https://doi.org/10.1006/spmi.2000.0942
State	Published - Nov 2000

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.2000.0942

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title = "Formation of unintentional dots in small Si nanostructures",

abstract = "We studied charge transport through lithographycally defined Si quantum dots. At low temperatures multi-dot transport is observed. In particular, we analyzed transport through double-dot devices. The data provide compelling evidence that the extra dots are formed within the gate oxide.",

author = "Rokhinson, {L. P.} and Guo, {L. J.} and Chou, {S. Y.} and Tsui, {D. C.}",

year = "2000",

month = nov,

doi = "10.1006/spmi.2000.0942",

language = "English (US)",

volume = "28",

pages = "413--417",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

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T1 - Formation of unintentional dots in small Si nanostructures

AU - Rokhinson, L. P.

AU - Guo, L. J.

AU - Chou, S. Y.

AU - Tsui, D. C.

PY - 2000/11

Y1 - 2000/11

N2 - We studied charge transport through lithographycally defined Si quantum dots. At low temperatures multi-dot transport is observed. In particular, we analyzed transport through double-dot devices. The data provide compelling evidence that the extra dots are formed within the gate oxide.

AB - We studied charge transport through lithographycally defined Si quantum dots. At low temperatures multi-dot transport is observed. In particular, we analyzed transport through double-dot devices. The data provide compelling evidence that the extra dots are formed within the gate oxide.

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U2 - 10.1006/spmi.2000.0942

DO - 10.1006/spmi.2000.0942

M3 - Article

AN - SCOPUS:0034315207

SN - 0749-6036

VL - 28

SP - 413

EP - 417

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 5-6

ER -

Formation of unintentional dots in small Si nanostructures

Abstract

All Science Journal Classification (ASJC) codes

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