Formation of the Ca/GaAs(110) interface

Keyphrases

• GaAs(110) 100%
• Valence Band Maximum 100%
• Metallicity 50%
• Gallium Arsenide 50%
• Fermi Level 50%
• Overlayer 50%
• Low Energy Electron Diffraction 50%
• Auger Electron Spectroscopy 50%
• Gap States 50%
• High-resolution Electron Energy Loss Spectroscopy (HREELS) 50%
• Adsorbate 50%
• Photoemission Spectroscopy 50%
• Band Bending 50%
• Ultraviolet Photoemission Spectroscopy 50%
• Low Coverage 50%
• Induced State 50%
• Native Defects 50%
• Exchange Reaction 50%
• Schottky Barrier Model 50%

Chemistry

• Valence Band 100%
• Photoelectron Spectroscopy 50%
• Fermi Level 50%
• Ultra-Violet Photoelectron Spectroscopy 50%
• Auger Electron Spectroscopy 50%
• Chemistry 50%
• Low Energy Electron Diffraction 50%
• Schottky Contact 50%
• Band Bending 50%
• Electron Energy Loss Spectroscopy 50%

Material Science

• Gallium Arsenide 100%
• Auger Electron Spectroscopy 33%
• Photoemission Spectroscopy 33%
• Low-Energy Electron Diffraction 33%
• Ultra Violet Photoemission Spectroscopy 33%
• Schottky Barrier 33%
• Electron Energy Loss Spectrometry 33%