Formation of self-assembled InAs quantum dots on (110) GaAs substrates

D. Wasserman; S. A. Lyon; M. Hadjipanayi; A. Maciel; J. F. Ryan

doi:10.1063/1.1633683

Formation of self-assembled InAs quantum dots on (110) GaAs substrates

D. Wasserman
, S. A. Lyon
, M. Hadjipanayi
, A. Maciel
, J. F. Ryan

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Self-assembled InAs QDs were grown on (110) GaAs substrates by incorporating a thin AlAs layer below each InAs QD layer. QD formation was verified by PL spectroscopy and AFM.

Original language	English (US)
Pages (from-to)	5050-5052
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	24
DOIs	https://doi.org/10.1063/1.1633683
State	Published - Dec 15 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1633683

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title = "Formation of self-assembled InAs quantum dots on (110) GaAs substrates",

abstract = "Self-assembled InAs QDs were grown on (110) GaAs substrates by incorporating a thin AlAs layer below each InAs QD layer. QD formation was verified by PL spectroscopy and AFM.",

author = "D. Wasserman and Lyon, \{S. A.\} and M. Hadjipanayi and A. Maciel and Ryan, \{J. F.\}",

year = "2003",

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doi = "10.1063/1.1633683",

language = "English (US)",

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pages = "5050--5052",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Formation of self-assembled InAs quantum dots on (110) GaAs substrates

AU - Wasserman, D.

AU - Lyon, S. A.

AU - Hadjipanayi, M.

AU - Maciel, A.

AU - Ryan, J. F.

PY - 2003/12/15

Y1 - 2003/12/15

N2 - Self-assembled InAs QDs were grown on (110) GaAs substrates by incorporating a thin AlAs layer below each InAs QD layer. QD formation was verified by PL spectroscopy and AFM.

AB - Self-assembled InAs QDs were grown on (110) GaAs substrates by incorporating a thin AlAs layer below each InAs QD layer. QD formation was verified by PL spectroscopy and AFM.

UR - https://www.scopus.com/pages/publications/0346503151

UR - https://www.scopus.com/pages/publications/0346503151#tab=citedBy

U2 - 10.1063/1.1633683

DO - 10.1063/1.1633683

M3 - Article

AN - SCOPUS:0346503151

SN - 0003-6951

VL - 83

SP - 5050

EP - 5052

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Formation of self-assembled InAs quantum dots on (110) GaAs substrates

Abstract

All Science Journal Classification (ASJC) codes

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