Formation of self-assembled InAs quantum dots on (110) GaAs substrates

D. Wasserman, S. A. Lyon, M. Hadjipanayi, A. Maciel, J. F. Ryan

Research output: Contribution to journalArticlepeer-review

39 Scopus citations


Self-assembled InAs QDs were grown on (110) GaAs substrates by incorporating a thin AlAs layer below each InAs QD layer. QD formation was verified by PL spectroscopy and AFM.

Original languageEnglish (US)
Pages (from-to)5050-5052
Number of pages3
JournalApplied Physics Letters
Issue number24
StatePublished - Dec 15 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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