Formation of self-assembled InAs quantum dots on (110) GaAs substrates

D. Wasserman; S. A. Lyon; M. Hadjipanayi; A. Maciel; J. F. Ryan

doi:10.1063/1.1633683

Formation of self-assembled InAs quantum dots on (110) GaAs substrates

D. Wasserman, S. A. Lyon, M. Hadjipanayi, A. Maciel, J. F. Ryan

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

Self-assembled InAs QDs were grown on (110) GaAs substrates by incorporating a thin AlAs layer below each InAs QD layer. QD formation was verified by PL spectroscopy and AFM.

Original language	English (US)
Pages (from-to)	5050-5052
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	24
DOIs	https://doi.org/10.1063/1.1633683
State	Published - Dec 15 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Formation of self-assembled InAs quantum dots on (110) GaAs substrates",

abstract = "Self-assembled InAs QDs were grown on (110) GaAs substrates by incorporating a thin AlAs layer below each InAs QD layer. QD formation was verified by PL spectroscopy and AFM.",

author = "D. Wasserman and Lyon, {S. A.} and M. Hadjipanayi and A. Maciel and Ryan, {J. F.}",

year = "2003",

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AU - Wasserman, D.

AU - Lyon, S. A.

AU - Hadjipanayi, M.

AU - Maciel, A.

AU - Ryan, J. F.

PY - 2003/12/15

Y1 - 2003/12/15

N2 - Self-assembled InAs QDs were grown on (110) GaAs substrates by incorporating a thin AlAs layer below each InAs QD layer. QD formation was verified by PL spectroscopy and AFM.

AB - Self-assembled InAs QDs were grown on (110) GaAs substrates by incorporating a thin AlAs layer below each InAs QD layer. QD formation was verified by PL spectroscopy and AFM.

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DO - 10.1063/1.1633683

M3 - Article

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EP - 5052

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Formation of self-assembled InAs quantum dots on (110) GaAs substrates

Abstract

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