Self-assembled InAs QDs were grown on (110) GaAs substrates by incorporating a thin AlAs layer below each InAs QD layer. QD formation was verified by PL spectroscopy and AFM.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Dec 15 2003|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)