Formation of schottky barriers on GaAs(110): from adsorbate-lnduced gap states to interface metallicity

A. Kahn, K. Stiles, D. Mao, S. F. Horng, K. Young, J. McKinley, D. G. Kilday, G. Margaritondo

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8 Scopus citations

Abstract

The formation of Ga-, Mn- and Ca-GaAs(110) interfaces is studied with soft x-ray and ultra-violet photoemission spectroscopy. Band bending at the semiconductor surface is analyzed in terms of a two-step model of the pinning of the Fermi level. At low coverage, adsorbate induced donor states produce rapid band bending on p-GaAs. A well defined trend in the energy level of the adsorbate-induced donor state vs ionization energy of the adatom emerges from these and previous data on In-, A1-, Ag-, Au-, Pd-, and Sn-GaAs(110) interfaces. At high coverage, the pinning of the Fermi level is associated with appearance of metallic character at the interface.

Original languageEnglish (US)
Pages (from-to)33-37
Number of pages5
JournalJournal of Electronic Materials
Volume18
Issue number1
DOIs
StatePublished - Jan 1 1989

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • GaAs
  • Schottky barrier
  • low temperature

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