Formation of helical domain walls in the fractional quantum Hall regime as a step toward realization of high-order non-Abelian excitations

We propose an experimentally feasible platform to realize parafermions (high-order non-Abelian excitations) based on spin transitions in the fractional quantum Hall effect regime. As a proof of concept we demonstrate a local control of the spin transition at a filling factor 2/3 and formation of a conducting fractional helical domain wall (fhDW) along a gate boundary. Coupled to an s-wave superconductor these fhDWs are expected to support parafermionic excitations. We present exact diagonalization numerical studies of fhDWs and show that they indeed possess electronic and magnetic structures needed for the formation of parafermions. A reconfigurable network of fhDWs will allow manipulation and braiding of parafermionic excitations in multigate devices.