Formation of Ge-Pt layer compound on Pt(100)

Taketoshi Matsumoto, Chih Sung Ho, Matthias Batzill, Bruce E. Koel

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We found a novel Ge-Pt layer compound on the Ge/Pt(100) surface by using alkali ion scattering spectroscopy (ALISS), low energy electron diffraction (LEED), and scanning tunneling microscopy (STM). This surface alloy is produced after Ge deposition and annealing at 600 K, and explains the surprising apparent stability of a Ge adlayer on Pt(100) to very high temperature. At low Ge deposition amounts, Ge atoms form a c(2×2) overlayer, but for deposition larger than 0.5 ML, excess Ge dissolves into the third layer in the c(2×2) positions to form the ordered layer compound with excess Ge diffusing more deeply into the substrate.

Original languageEnglish (US)
Pages (from-to)21019-21021
Number of pages3
JournalJournal of Physical Chemistry C
Volume113
Issue number50
DOIs
StatePublished - 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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