Abstract
We have characterized, by means of atomic force microscopy, the as-grown and subsequently in situ annealed surfaces of 5 nm GaAs layers grown by molecular beam epitaxy (MBE) on a vacuum-cleaved (110) GaAs surface, and find that a high temperature growth interruption and anneal remarkably improves the surface morphology of the (110) GaAs layer. Interruption of the 490°C epitaxial GaAs growth by a 10 minute anneal at 600°C under an As4 overpressure produces an atomically-flat surface free of monolayer step edges over areas measuring several tens of μm on a side. These results suggest that the (110) GaAs surface has much higher stability tinder annealing conditions than under MBE growth conditions.
| Original language | English (US) |
|---|---|
| Pages (from-to) | L252-L254 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 40 |
| Issue number | 3 B |
| DOIs | |
| State | Published - Mar 15 2001 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Engineering
- General Physics and Astronomy
Keywords
- (110) GaAs
- Atomic force microscopy
- Cleaved edge overgrowth
- Flat surface formation
- Growth interruption annealing
- MBE
- Surface morphology
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