Formation of flat monolayer-step-free (110) GaAs surfaces by growth interruption annealing during cleaved-edge epitaxial overgrowth

Masahiro Yoshita; Hidefumi Akiyama; Loren N. Pfeiffer; Ken W. West

doi:10.1143/jjap.40.l252

Formation of flat monolayer-step-free (110) GaAs surfaces by growth interruption annealing during cleaved-edge epitaxial overgrowth

Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, Ken W. West

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

We have characterized, by means of atomic force microscopy, the as-grown and subsequently in situ annealed surfaces of 5 nm GaAs layers grown by molecular beam epitaxy (MBE) on a vacuum-cleaved (110) GaAs surface, and find that a high temperature growth interruption and anneal remarkably improves the surface morphology of the (110) GaAs layer. Interruption of the 490°C epitaxial GaAs growth by a 10 minute anneal at 600°C under an As₄ overpressure produces an atomically-flat surface free of monolayer step edges over areas measuring several tens of μm on a side. These results suggest that the (110) GaAs surface has much higher stability tinder annealing conditions than under MBE growth conditions.

Original language	English (US)
Pages (from-to)	L252-L254
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	3 B
DOIs	https://doi.org/10.1143/jjap.40.l252
State	Published - Mar 15 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

Keywords

(110) GaAs
Atomic force microscopy
Cleaved edge overgrowth
Flat surface formation
Growth interruption annealing
MBE
Surface morphology

Access to Document

10.1143/jjap.40.l252

Cite this

@article{c8f672b88b834206a38d900722c5d323,

title = "Formation of flat monolayer-step-free (110) GaAs surfaces by growth interruption annealing during cleaved-edge epitaxial overgrowth",

abstract = "We have characterized, by means of atomic force microscopy, the as-grown and subsequently in situ annealed surfaces of 5 nm GaAs layers grown by molecular beam epitaxy (MBE) on a vacuum-cleaved (110) GaAs surface, and find that a high temperature growth interruption and anneal remarkably improves the surface morphology of the (110) GaAs layer. Interruption of the 490°C epitaxial GaAs growth by a 10 minute anneal at 600°C under an As4 overpressure produces an atomically-flat surface free of monolayer step edges over areas measuring several tens of μm on a side. These results suggest that the (110) GaAs surface has much higher stability tinder annealing conditions than under MBE growth conditions.",

keywords = "(110) GaAs, Atomic force microscopy, Cleaved edge overgrowth, Flat surface formation, Growth interruption annealing, MBE, Surface morphology",

author = "Masahiro Yoshita and Hidefumi Akiyama and Pfeiffer, {Loren N.} and West, {Ken W.}",

year = "2001",

month = mar,

day = "15",

doi = "10.1143/jjap.40.l252",

language = "English (US)",

volume = "40",

pages = "L252--L254",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3 B",

}

Formation of flat monolayer-step-free (110) GaAs surfaces by growth interruption annealing during cleaved-edge epitaxial overgrowth. / Yoshita, Masahiro; Akiyama, Hidefumi; Pfeiffer, Loren N. et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 3 B, 15.03.2001, p. L252-L254.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Formation of flat monolayer-step-free (110) GaAs surfaces by growth interruption annealing during cleaved-edge epitaxial overgrowth

AU - Yoshita, Masahiro

AU - Akiyama, Hidefumi

AU - Pfeiffer, Loren N.

AU - West, Ken W.

PY - 2001/3/15

Y1 - 2001/3/15

N2 - We have characterized, by means of atomic force microscopy, the as-grown and subsequently in situ annealed surfaces of 5 nm GaAs layers grown by molecular beam epitaxy (MBE) on a vacuum-cleaved (110) GaAs surface, and find that a high temperature growth interruption and anneal remarkably improves the surface morphology of the (110) GaAs layer. Interruption of the 490°C epitaxial GaAs growth by a 10 minute anneal at 600°C under an As4 overpressure produces an atomically-flat surface free of monolayer step edges over areas measuring several tens of μm on a side. These results suggest that the (110) GaAs surface has much higher stability tinder annealing conditions than under MBE growth conditions.

AB - We have characterized, by means of atomic force microscopy, the as-grown and subsequently in situ annealed surfaces of 5 nm GaAs layers grown by molecular beam epitaxy (MBE) on a vacuum-cleaved (110) GaAs surface, and find that a high temperature growth interruption and anneal remarkably improves the surface morphology of the (110) GaAs layer. Interruption of the 490°C epitaxial GaAs growth by a 10 minute anneal at 600°C under an As4 overpressure produces an atomically-flat surface free of monolayer step edges over areas measuring several tens of μm on a side. These results suggest that the (110) GaAs surface has much higher stability tinder annealing conditions than under MBE growth conditions.

KW - (110) GaAs

KW - Atomic force microscopy

KW - Cleaved edge overgrowth

KW - Flat surface formation

KW - Growth interruption annealing

KW - MBE

KW - Surface morphology

UR - http://www.scopus.com/inward/record.url?scp=0035867763&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035867763&partnerID=8YFLogxK

U2 - 10.1143/jjap.40.l252

DO - 10.1143/jjap.40.l252

M3 - Article

AN - SCOPUS:0035867763

SN - 0021-4922

VL - 40

SP - L252-L254

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 3 B

ER -

Formation of flat monolayer-step-free (110) GaAs surfaces by growth interruption annealing during cleaved-edge epitaxial overgrowth

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

Other files and links

Fingerprint

Cite this