Formation of a high quality two-dimensional electron gas on cleaved GaAs

Loren Pfeiffer; K. W. West; H. L. Stormer; J. P. Eisenstein; K. W. Baldwin; D. Gershoni; J. Spector

doi:10.1063/1.103121

Formation of a high quality two-dimensional electron gas on cleaved GaAs

Loren Pfeiffer, K. W. West, H. L. Stormer, J. P. Eisenstein, K. W. Baldwin, D. Gershoni, J. Spector

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Abstract

We have succeeded in fabricating a two-dimensional electron gas (2DEG) on the cleaved (110) edge of a GaAs wafer by molecular beam epitaxy (MBE). A (100) wafer previously prepared by MBE growth is reinstalled in the MBE chamber so that an in situ cleave exposes a fresh (110) GaAs edge for further MBE overgrowth. A sequence of Si-doped AlGaAs layers completes the modulation-doped structure at the cleaved edge. Mobilities as high as 6.1×10⁵ cm²/V s are measured in the 2DEG at the cleaved interface.

Original language	English (US)
Pages (from-to)	1697-1699
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	17
DOIs	https://doi.org/10.1063/1.103121
State	Published - 1990
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.103121

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title = "Formation of a high quality two-dimensional electron gas on cleaved GaAs",

abstract = "We have succeeded in fabricating a two-dimensional electron gas (2DEG) on the cleaved (110) edge of a GaAs wafer by molecular beam epitaxy (MBE). A (100) wafer previously prepared by MBE growth is reinstalled in the MBE chamber so that an in situ cleave exposes a fresh (110) GaAs edge for further MBE overgrowth. A sequence of Si-doped AlGaAs layers completes the modulation-doped structure at the cleaved edge. Mobilities as high as 6.1×105 cm2/V s are measured in the 2DEG at the cleaved interface.",

author = "Loren Pfeiffer and West, {K. W.} and Stormer, {H. L.} and Eisenstein, {J. P.} and Baldwin, {K. W.} and D. Gershoni and J. Spector",

year = "1990",

doi = "10.1063/1.103121",

language = "English (US)",

volume = "56",

pages = "1697--1699",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Formation of a high quality two-dimensional electron gas on cleaved GaAs

AU - Pfeiffer, Loren

AU - West, K. W.

AU - Stormer, H. L.

AU - Eisenstein, J. P.

AU - Baldwin, K. W.

AU - Gershoni, D.

AU - Spector, J.

PY - 1990

Y1 - 1990

N2 - We have succeeded in fabricating a two-dimensional electron gas (2DEG) on the cleaved (110) edge of a GaAs wafer by molecular beam epitaxy (MBE). A (100) wafer previously prepared by MBE growth is reinstalled in the MBE chamber so that an in situ cleave exposes a fresh (110) GaAs edge for further MBE overgrowth. A sequence of Si-doped AlGaAs layers completes the modulation-doped structure at the cleaved edge. Mobilities as high as 6.1×105 cm2/V s are measured in the 2DEG at the cleaved interface.

AB - We have succeeded in fabricating a two-dimensional electron gas (2DEG) on the cleaved (110) edge of a GaAs wafer by molecular beam epitaxy (MBE). A (100) wafer previously prepared by MBE growth is reinstalled in the MBE chamber so that an in situ cleave exposes a fresh (110) GaAs edge for further MBE overgrowth. A sequence of Si-doped AlGaAs layers completes the modulation-doped structure at the cleaved edge. Mobilities as high as 6.1×105 cm2/V s are measured in the 2DEG at the cleaved interface.

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DO - 10.1063/1.103121

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AN - SCOPUS:0001320449

SN - 0003-6951

VL - 56

SP - 1697

EP - 1699

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Formation of a high quality two-dimensional electron gas on cleaved GaAs

Abstract

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