Formation mechanisms of monolayer pits having characteristic step-edge shapes on annealed GaAs (110) surfaces

Akira Ishii; Tsuyoshi Aisaka; Ji Won Oh; Masahiro Yoshita; Hidefumi Akiyama; Loren N. Pfeiffer; Ken W. West

doi:10.1016/j.tsf.2004.06.109

Formation mechanisms of monolayer pits having characteristic step-edge shapes on annealed GaAs (110) surfaces

Akira Ishii, Tsuyoshi Aisaka, Ji Won Oh, Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, Ken W. West

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

An isolated pit and connected pits with one-monolayer depth have characteristic step-edge shapes on a GaAs (110) surface fabricated by a cleaved-edge overgrowth (CEO) method and high temperature growth-interrupt annealing. First principles calculations of Ga and As adatoms have shown that both Ga and As adatoms are most stable at the sites near As of the topmost layer while they are unstable at those near Ga, which is expected to be the microscopic origin for the formation of the fish-shaped pits.

Original language	English (US)
Pages (from-to)	38-41
Number of pages	4
Journal	Thin Solid Films
Volume	464-465
DOIs	https://doi.org/10.1016/j.tsf.2004.06.109
State	Published - Oct 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Keywords

(110)
Density functional calculations
GaAs
Migration

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10.1016/j.tsf.2004.06.109

Cite this

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title = "Formation mechanisms of monolayer pits having characteristic step-edge shapes on annealed GaAs (110) surfaces",

abstract = "An isolated pit and connected pits with one-monolayer depth have characteristic step-edge shapes on a GaAs (110) surface fabricated by a cleaved-edge overgrowth (CEO) method and high temperature growth-interrupt annealing. First principles calculations of Ga and As adatoms have shown that both Ga and As adatoms are most stable at the sites near As of the topmost layer while they are unstable at those near Ga, which is expected to be the microscopic origin for the formation of the fish-shaped pits.",

keywords = "(110), Density functional calculations, GaAs, Migration",

author = "Akira Ishii and Tsuyoshi Aisaka and Oh, {Ji Won} and Masahiro Yoshita and Hidefumi Akiyama and Pfeiffer, {Loren N.} and West, {Ken W.}",

year = "2004",

month = oct,

doi = "10.1016/j.tsf.2004.06.109",

language = "English (US)",

volume = "464-465",

pages = "38--41",

journal = "Thin Solid Films",

issn = "0040-6090",

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T1 - Formation mechanisms of monolayer pits having characteristic step-edge shapes on annealed GaAs (110) surfaces

AU - Ishii, Akira

AU - Aisaka, Tsuyoshi

AU - Oh, Ji Won

AU - Yoshita, Masahiro

AU - Akiyama, Hidefumi

AU - Pfeiffer, Loren N.

AU - West, Ken W.

PY - 2004/10

Y1 - 2004/10

N2 - An isolated pit and connected pits with one-monolayer depth have characteristic step-edge shapes on a GaAs (110) surface fabricated by a cleaved-edge overgrowth (CEO) method and high temperature growth-interrupt annealing. First principles calculations of Ga and As adatoms have shown that both Ga and As adatoms are most stable at the sites near As of the topmost layer while they are unstable at those near Ga, which is expected to be the microscopic origin for the formation of the fish-shaped pits.

AB - An isolated pit and connected pits with one-monolayer depth have characteristic step-edge shapes on a GaAs (110) surface fabricated by a cleaved-edge overgrowth (CEO) method and high temperature growth-interrupt annealing. First principles calculations of Ga and As adatoms have shown that both Ga and As adatoms are most stable at the sites near As of the topmost layer while they are unstable at those near Ga, which is expected to be the microscopic origin for the formation of the fish-shaped pits.

KW - (110)

KW - Density functional calculations

KW - GaAs

KW - Migration

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DO - 10.1016/j.tsf.2004.06.109

M3 - Article

AN - SCOPUS:4644350112

SN - 0040-6090

VL - 464-465

SP - 38

EP - 41

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Formation mechanisms of monolayer pits having characteristic step-edge shapes on annealed GaAs (110) surfaces

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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