Fluorocarbon plasma etching of silicon: Factors controlling etch rate

The examination of silicon etching in the presence of FC radicals and argon ions by using molecular dynamics (MD) simulations was discussed. The role and the nature of a-Si:C layer in Si etching under simultaneous impact with energetic Ar ⁺ and with thermal CF ₂ and F was also examined. The molecular dynamic simulations began with a cell of about 640 silicon atoms having an exposed area of 470 Å ². It was observed that the a-Si:C layer was the primary factor that reduce the etch rate of Si surfaces in the presence of FC plasma rather than the FC polymer itself.