Fluorocarbon plasma etching of silicon: Factors controlling etch rate

David Humbird, David B. Graves

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


The examination of silicon etching in the presence of FC radicals and argon ions by using molecular dynamics (MD) simulations was discussed. The role and the nature of a-Si:C layer in Si etching under simultaneous impact with energetic Ar + and with thermal CF 2 and F was also examined. The molecular dynamic simulations began with a cell of about 640 silicon atoms having an exposed area of 470 Å 2. It was observed that the a-Si:C layer was the primary factor that reduce the etch rate of Si surfaces in the presence of FC plasma rather than the FC polymer itself.

Original languageEnglish (US)
Pages (from-to)65-70
Number of pages6
JournalJournal of Applied Physics
Issue number1
StatePublished - Jul 1 2004
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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