Abstract
We present a theoretical investigation of hydrogen diffusion and of vacancy induced self diffusion in crystalline silicon, via first-principle molecular dynamics simulations. We show that, in the high temperature regime, both processes are characterized by important dynamical effects.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 175-189 |
| Number of pages | 15 |
| Journal | Proceedings - The Electrochemical Society |
| Volume | 91 |
| Issue number | 4 |
| State | Published - 1991 |
| Externally published | Yes |
| Event | Symposium on Process Physics and Modeling in Semiconductor Technology - Montreal, Que, Can Duration: May 1 1990 → May 1 1990 |
All Science Journal Classification (ASJC) codes
- General Engineering