We present a theoretical investigation of hydrogen diffusion and of vacancy induced self diffusion in crystalline silicon, via first-principle molecular dynamics simulations. We show that, in the high temperature regime, both processes are characterized by important dynamical effects.
|Original language||English (US)|
|Number of pages||15|
|Journal||Proceedings - The Electrochemical Society|
|State||Published - Jan 1 1991|
|Event||Symposium on Process Physics and Modeling in Semiconductor Technology - Montreal, Que, Can|
Duration: May 1 1990 → May 1 1990
All Science Journal Classification (ASJC) codes