FinFET circuit design

Prateek Mishra, Anish Muttreja, Niraj K. Jha

Research output: Chapter in Book/Report/Conference proceedingChapter

79 Scopus citations

Abstract

Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nanoscale. FinFETs are double-gate devices. The two gates of a FinFET can either be shorted for higher perfomance or independently controlled for lower leakage or reduced transistor count. This gives rise to a rich design space. This chapter provides an introduction to various interesting FinFET logic design styles, novel circuit designs, and layout considerations.

Original languageEnglish (US)
Title of host publicationNanoelectronic Circuit Design
PublisherSpringer New York
Pages23-54
Number of pages32
ISBN (Print)9781441974440
DOIs
StatePublished - Dec 1 2011

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Keywords

  • Circuit design
  • FinFETs
  • Layout
  • Leakage power
  • Power optimization

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  • Cite this

    Mishra, P., Muttreja, A., & Jha, N. K. (2011). FinFET circuit design. In Nanoelectronic Circuit Design (pp. 23-54). Springer New York. https://doi.org/10.1007/978-1-4419-7609-3_2