FinFET circuit design

Prateek Mishra; Anish Muttreja; Niraj K. Jha

doi:10.1007/978-1-4419-7609-3_2

FinFET circuit design

Prateek Mishra, Anish Muttreja, Niraj K. Jha

Research output: Chapter in Book/Report/Conference proceeding › Chapter

101 Scopus citations

Abstract

Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nanoscale. FinFETs are double-gate devices. The two gates of a FinFET can either be shorted for higher perfomance or independently controlled for lower leakage or reduced transistor count. This gives rise to a rich design space. This chapter provides an introduction to various interesting FinFET logic design styles, novel circuit designs, and layout considerations.

Original language	English (US)
Title of host publication	Nanoelectronic Circuit Design
Publisher	Springer New York
Pages	23-54
Number of pages	32
ISBN (Print)	9781441974440
DOIs	https://doi.org/10.1007/978-1-4419-7609-3_2
State	Published - 2011

All Science Journal Classification (ASJC) codes

General Engineering

Keywords

Circuit design
FinFETs
Layout
Leakage power
Power optimization

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10.1007/978-1-4419-7609-3_2

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abstract = "Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nanoscale. FinFETs are double-gate devices. The two gates of a FinFET can either be shorted for higher perfomance or independently controlled for lower leakage or reduced transistor count. This gives rise to a rich design space. This chapter provides an introduction to various interesting FinFET logic design styles, novel circuit designs, and layout considerations.",

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AU - Mishra, Prateek

AU - Muttreja, Anish

AU - Jha, Niraj K.

PY - 2011

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AB - Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nanoscale. FinFETs are double-gate devices. The two gates of a FinFET can either be shorted for higher perfomance or independently controlled for lower leakage or reduced transistor count. This gives rise to a rich design space. This chapter provides an introduction to various interesting FinFET logic design styles, novel circuit designs, and layout considerations.

KW - Circuit design

KW - FinFETs

KW - Layout

KW - Leakage power

KW - Power optimization

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BT - Nanoelectronic Circuit Design

PB - Springer New York

ER -

FinFET circuit design

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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