FinFET circuit design

Prateek Mishra, Anish Muttreja, Niraj K. Jha

Research output: Chapter in Book/Report/Conference proceedingChapter

99 Scopus citations


Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nanoscale. FinFETs are double-gate devices. The two gates of a FinFET can either be shorted for higher perfomance or independently controlled for lower leakage or reduced transistor count. This gives rise to a rich design space. This chapter provides an introduction to various interesting FinFET logic design styles, novel circuit designs, and layout considerations.

Original languageEnglish (US)
Title of host publicationNanoelectronic Circuit Design
PublisherSpringer New York
Number of pages32
ISBN (Print)9781441974440
StatePublished - 2011

All Science Journal Classification (ASJC) codes

  • General Engineering


  • Circuit design
  • FinFETs
  • Layout
  • Leakage power
  • Power optimization


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